Hostname: page-component-77c89778f8-cnmwb Total loading time: 0 Render date: 2024-07-17T03:39:32.987Z Has data issue: false hasContentIssue false
  • English
  • Français

Metal Silicides Formed by Direct Ion Beam Deposition*

Published online by Cambridge University Press:  25 February 2011

R. A. Zuhr ,
S. J. Pennycook ,
T. E. Haynes  and
O. W. Holland
R. A. Zuhr
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
T. E. Haynes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
O. W. Holland
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
Get access

Abstract

Thin films of transition metal silicides have been produced at low temperatures on Si substrates by direct ion beam deposition (IBD) of the metal ion. Using a mass-analyzed beam of metallic ions rastered over the target at energies on the order of 100 eV and at substrate temperatures near 500°C, stoichiometric silicide films of varying thicknesses up to 300 nm have been formed on both n- and p-type Si. The advantages of this technique over other methods for silicide formation include good control of thickness by current integration, high purity due to the mass analysis, and control of incident ion energy which permits formation of the disilicide phase at low temperatures, thereby minimizing the thermal budget and the associated dopant diffusion in the underlying substrate. Films were characterized by Rutherford backscattering, transmission electron microscopy, and electrical measurements. Co, Fe, Ni, Ti, and W silicides have been formed by this direct deposition process. The effectiveness of the technique has been found to be dependent upon the diffusion characteristics of the particular metal/Si couple involved, with systems in which Si is the dominant diffuser, such as Ti/Si, giving the best results. Stoichiometric TiSi2 films produced at 550°C by this process show low bulk-like resistivity (15 μΩ-cm) without subsequent high-temperature annealing. All of these characteristics make silicide formation by IBD attractive for integrated circuit fabrication and shallow junction technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 47
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract no. DE-AC05-84OR21400 with Martin Marietta Energy Systems, Inc.

References

REFERENCES

1. Murarka, S. P., J. Vac. Sci. Technol. 17, 775 (1980).Google Scholar
2. Malhotza, U., Martin, T. L., and Mahan, J. E., J. Vac. Sci. Technol. B 2, 10 (1984).Google Scholar
3. Narayan, J., Stephenson, T. A., Brat, T., Fathy, D., and Pennycook, S. J., J. Appl. Phys. 60, 631 (1986).Google Scholar
4. van Ommen, A. H., van Houtum, H. J. W., and Theunissen, A. M. L., J. Appl. Phys. 60, 627 (1986).Google Scholar
5. Fathy, D., Holland, O. W., Appleton, B. R., and Stephenson, T. S., J. Mater. Lett. 5, 315 (1987).Google Scholar
6. For a complete description of the IBD system, see Zuhr, R. A., Appleton, B. R., Herbots, N., Larson, B. C., Noggle, T. S., and Pennycook, S. J., J. Vac. Sci. Technol. A 5, 2135 (1987).Google Scholar
7. Appleton, B. R., Zuhr, R. A., Noggle, T. S., Herbots, N., and Pennycook, S. J., Mat. Res. Soc. Symp. Proc. 74, 45 (1987).Google Scholar
8. Zuhr, R. A., Fathy, D., and Holland, O. W., p. 119 in Proc. of the Symposium on Dislocations and Interfaces in Semiconductors, ed. by Rajan, K., Narayan, J., and Ast, D. (The Metallurgical Society, 1988).Google Scholar
9. Murarka, S. P., Silicides for VLSI Applications (Academic Press, New York, 1983).Google Scholar
10. Murarka, S. P. and Fraser, D. B., J. Appl. Phys. 51, 342 (1980).Google Scholar
11. Vaidya, S. and Murarka, S. P., Appl. Phys. Lett. 37, 51 (1980).Google Scholar