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Metal Induced Growth of Poly-Si Solar Cells and Silicide Nanowires by use of Multiple Catalyst Layers

Published online by Cambridge University Press:  01 February 2011

Joondong Kim ,
Chunhai Ji  and
Wayne A. Anderson
Joondong Kim
Affiliation:
Department of Electrical Engineering University at Buffalo, State University of New York, Buffalo NY 14260
Chunhai Ji
Affiliation:
Department of Electrical Engineering University at Buffalo, State University of New York, Buffalo NY 14260
Wayne A. Anderson
Affiliation:
Department of Electrical Engineering University at Buffalo, State University of New York, Buffalo NY 14260
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Abstract

Polycrystalline Si thin films and single NiSi crystalline nanowires were made by the metal induced growth method. The different growth mechanisms for poly-Si and nanowires lie in the metal silicide formation. Poly-Si growth is based on metal disilicide formation and the growth of nanowires depends on metal monosilicide formation. The metal silicide formation depends on catalyst species and sputtering power. Following catalyst coating, Si was deposited in a DC magnetron sputtering system to grow poly-Si or nanowires. Several metals (Ni, Co, Co/Ni and Pd) were used as catalysts to confirm the nanowire growth mechanism as well as to fabricate solar cells. Poly-Si thin films were about 5 μm thick with up to 1 μm crystallite size. Nanowires were up to 10 μm long with about 50 nm diameter.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A21.5
Copyright
Copyright © Materials Research Society 2005

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References

[1] Guliants, E.A., Anderson, W.A., Guo, L.P., Guliants, V.V., Thin Solid Films, 385 (2001), 74 10.1016/S0040-6090(00)01916-7Google Scholar
[2] Ji, Chunhai and Anderson, Wayne A., IEEE Electron Devices, 50 (2003), 1885 Google Scholar
[3] Gambino, J. P., Colgan, E. G., Mater. Chem. Phys. 52 (1998) 99.10.1016/S0254-0584(98)80014-XGoogle Scholar
[4] Kim, Joondong and Anderson, Wayne A., Thin Solid Films (In press)Google Scholar
[5] Kim, Joondong, Anderson, Wayne A., Guliants, Elena A. and Bunker, Christopher E., Morphological Changes while Growing Nickel Monosilicide Nanowires, Boston, U.S.A. Nov. 28 – Dec. 2, 2004, Materials Research Society Symposium Proceeding 854E (2004) U 5. 10.10.1557/PROC-854-U5.10Google Scholar
[6] Ji, Chunhai, Kim, Joondong and Anderson, Wayne A., Study of Photovoltaic Properties and Light Absorption in Poly-Si Thin Film Solar Cell Grown by the Metal-Induced Method, Denver, U.S.A. August 4–6, 2004, SPIE-The International Society for Optical Engineering 5520-39 (2004), 184-191Google Scholar
[7] Ghosh, Amal K., Fishman, Charles and Feng, Tom, J. Appl. Phys., 51 (1980), 446,10.1063/1.327342Google Scholar