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Metal Contact Formation On Zinc Cadmium Telluride Detector Material

Published online by Cambridge University Press:  10 February 2011

Arnold Burger ,
Henry Chen ,
Kuo-Tong Chen ,
Detang Shi ,
W. Eugene Collins  and
R. B. James
Arnold Burger
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208
Henry Chen
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208
Kuo-Tong Chen
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208
Detang Shi
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208
W. Eugene Collins
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208
R. B. James
Affiliation:
Advanced Electronics Manufacturing Technologies Department, Sandia National Laboratories, Livermore, CA 94550
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Abstract

The understanding of the electric contact formation process is critical in exploiting the full potential of Cd1−xZnxTe(CZT) material for room temperature detection applications. The metalsemiconductor electrical characteristics were shown in this study to be strongly affected by the surface preparation steps prior to metallization (polishing, and chemical etching), the choice of the metal and contact deposition technique, and by the subsequent surface passivation of CdZnTe. In this paper, we also present the implementation new detector fabrication processing stepsresulting in a significant lowering of the dark leakage current and an improvement in the detector performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 83
Copyright
Copyright © Materials Research Society 1998

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