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MESFETs on H-terminated Single Crystal Diamond

Published online by Cambridge University Press:  31 January 2011

Paolo Calvani ,
Maria Cristina Rossi ,
Gennaro Conte ,
Stefano Carta ,
Ennio Giovine ,
Benedetto Pasciuto ,
Ernesto Limiti ,
Federica Cappelluti ,
Victor Ralchenko  and
A. Bolshakov
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Paolo Calvani
Affiliation:
pcalvani@uniroma3.it, Roma Tre University, Electronic Engineering Dept., Roma, Italy
Maria Cristina Rossi
Affiliation:
mcrossi@uniroma3.it, Roma Tre University, Electronic Engineering Dept, Roma, Italy
Gennaro Conte
Affiliation:
gconte@niroma3.it, Roma Tre University, Electronic Engineering Dept., Roma, Italy
Stefano Carta
Affiliation:
stefano.carta@ifn.cnr.it, IFN-CNR, Roma, Italy
Ennio Giovine
Affiliation:
giovine@ifn.cnr.it, IFN-CNR, Roma, Italy
Benedetto Pasciuto
Affiliation:
benedetto.p@gmail.com, Tor Vergata University, Electronic Engineering Dept., Roma, Italy
Ernesto Limiti
Affiliation:
limiti@ing.uniroma2.it, Tor Vergata University, Electronic Engineering Dept., Roma, Italy
Federica Cappelluti
Affiliation:
federica.cappelluti@polito.it, Politecnico di Torino, Department of Electronics, Torino, Italy
Victor Ralchenko
Affiliation:
ralchenko@nsc.gpi.ru, Russian Academy of Science, General Physics Institute, Moskow, Russian Federation
A. Bolshakov
Affiliation:
bolshakov@nsc.gpi.ru, Russian Academy of Science, General Physics Institute, Moscow, Russian Federation
G. Sharonov
Affiliation:
sharonov@bsu.by, Belarus State University, Institute of Applied Physical Problems, Minsk, Belarus
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Abstract

Epitaxial diamond films were deposited on polished single crystal Ib type HPHT diamond plates of (100) orientation by microwave CVD. The epilayers were used for the fabrication of surface channel MESFET structures having sub-micrometer gate length in the range 200-800 nm. Realized devices show maximum drain current and trasconductance values of about 190 mA/mm and 80 mS/mm, respectively, for MESFETs having 200 nm gate length. RF performance evaluation gave cut off frequency of about 14 GHz and maximum oscillation frequency of more than 26 GHz for the same device geometry.

Keywords

devicesdiamondelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1203: Symposium J – Diamond Electronics and Bioelectronics-Fundamentals to Applications III , 2009 , 1203-J15-03
Copyright
Copyright © Materials Research Society 2010

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References

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