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Memory Effects In Manganese Perovskites

Published online by Cambridge University Press:  01 February 2011

N. Noginova ,
G. Chelule  and
G. B. Loutts
N. Noginova
Affiliation:
Center for Materials Research, Norfolk State University, Norfolk, VA23504
G. Chelule
Affiliation:
Center for Materials Research, Norfolk State University, Norfolk, VA23504
G. B. Loutts
Affiliation:
Center for Materials Research, Norfolk State University, Norfolk, VA23504
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Abstract

Manganese doped perovskites are promising materials for non-magnetic data storage. Systems with low doping concentration, such as Mn:YAlO3 are high-quality optical crystals, demonstrating significant photorefractive effect. Optically and electrically induced quasi-permanent change in low-field conductivity was observed in the materials with high concentration of manganese such as single crystals and films of LaGa1−xMnxO3 (x= 0.1–1). These memory effects can last for a long time at room temperature and can be easily erased by heating up to 230 C. We explain our experimental results by photoinduced or thermoinduced local phase transition with the oxidation of Mn ions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 803: Symposia GG/HH – Advanced Characterization Techniques for Data Storage Materials – Phase Change and Nonmagnetic Materials for Data Storage , 2003 , HH2.9
Copyright
Copyright © Materials Research Society 2004

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References

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