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Melting Velocity Measurements in Silicon

Published online by Cambridge University Press:  26 February 2011

B.E. Homan  and
C.A. Macdonald
B.E. Homan
Affiliation:
Physics Department, University at Albany, SUNY, Albany, NY 12222
C.A. Macdonald
Affiliation:
Physics Department, University at Albany, SUNY, Albany, NY 12222
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Abstract

Melting velocities in silicon were measured on a picosecond time scale by employing pump-probe and self-reflectivity measurements. The pump laser was a 40 picosecond XeCl excimer (308 am) and the probe a dye laser at 600 am. Samples were phosphorous doped silicon wafers. Average melt-in velocities as high as 800 m/s were observed. Best fit to the data was achieved with an asymmetric transient state theory model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 205: Symposium F – Kinetics of Phase Transformations , 1990 , 295
Copyright
Copyright © Materials Research Society 1992

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References

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