Hostname: page-component-84b7d79bbc-fnpn6 Total loading time: 0 Render date: 2024-07-29T10:39:49.924Z Has data issue: false hasContentIssue false
  • English
  • Français

Mechanism of the Preferential Edge-Positioning of Self-Organized Ge Quantum Dots on Si Mesas

Published online by Cambridge University Press:  10 February 2011

G. Jin ,
Y.S. Tang ,
J.L. Liu ,
S.G. Thomas  and
K.L. Wang
G. Jin
Affiliation:
Device Research Laboratory, Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90095-1594, gjin@ee.ucla.edu
Y.S. Tang
Affiliation:
Device Research Laboratory, Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90095-1594
J.L. Liu
Affiliation:
Device Research Laboratory, Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90095-1594
S.G. Thomas
Affiliation:
Device Research Laboratory, Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90095-1594
K.L. Wang
Affiliation:
Device Research Laboratory, Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90095-1594
Get access

Abstract

We have investigated the preferential positioning of self-organized Ge quantum dots on Si (001) mesas fabricated in a selective epitaxial growth (SEG) mode of gas-source molecular beam epitaxy. The surface morphology was evaluated by atomic force microscopy, and for the Si SEG structures, showed mass accumulation at the periphery. Using micro-Raman spectroscopic imaging, the strain-field distribution of Si structures was studied before Ge deposition, and the results suggest a tensile strain at/near the periphery of the structure while a compressive strain at the center. These structures were subsequently used as a template for Ge dots, which tended to align along the mesa edge. The strain field distribution on Si mesas is speculated to be the driving force for preferential nucleation of Ge dots.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 571: Symposium W – Semiconductor Quantum Dots , 1999 , 31
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Guha, S., Madhukar, A. and Rajkumar, K. C., Appl. Phys. Lett. 57, 2110 (1990).10.1063/1.103914Google Scholar
2. Bresslerhill, V., Varma, S., Lorke, A. and Nosho, B.Z., Phys. Rev. Lett. 74, 3209 (1995).10.1103/PhysRevLett.74.3209Google Scholar
3. MedeirosRibeiro, G., Pikus, F. G., Petroff, P. M. and Efros, A. L., Phys. Rev. B 55, 1568 (1997).10.1103/PhysRevB.55.1568Google Scholar
4. Aigouy, L., Holden, T., Pollak, F. H., and Ledentsov, N.N., Appl. Phys. Lett. 70, 3329 (1997).10.1063/1.119160Google Scholar
5. Eaglesham, D. J. and Cerullo, M., Phys. Rev. Lett. 64, 1943 (1990).10.1103/PhysRevLett.64.1943Google Scholar
6. Tersoff, J. and LeGoues, F. K., Phys. Rev. Lett. 72, 3570 (1994).10.1103/PhysRevLett.72.3570Google Scholar
7. Sakai, A. and Tatsumi, T., Phys. Rev. Lett. 71, 4007 (1993).10.1103/PhysRevLett.71.4007Google Scholar
8. Eaglesham, D. J., Unterwald, F.C. and Jacobson, D.C., Phys. Rev. Lett. 70, 966 (1993).10.1103/PhysRevLett.70.966Google Scholar
9. Lent, C.S., Tougaw, P.D., Porod, W. and Bernstein, G.H., Nanotechnology 4, 19 (1993).10.1088/0957-4484/4/1/004Google Scholar
10. Orlov, A.O., Amlani, I., Berstein, G.H., Lent, C.S. and Snider, G.L., Science 277, 928 (1997).10.1126/science.277.5328.928Google Scholar
11. Sakamoto, K., Matsuhata, H., Tanner, M. O., Wang, D., Wang, K. L., Thin Solid Films 321, 55 (1998).10.1016/S0040-6090(98)00443-XGoogle Scholar
12. Shirgaev, S. Y., Pedersen, E.V., Jensen, F., Petersen, J.W., Hansen, J.L. and Larsen, A.N. Thin Solid Films 294, 311 (1997).10.1016/S0040-6090(96)09240-1Google Scholar
13. Kamins, T.I. and Williams, R.S., Appl. Phys. Lett. 71, 1201 (1997);10.1063/1.119625Google Scholar
14. Zinke-Allmang, M., Feldman, L.C. and Grabow, M.H., Surf. Sci. Rep. 16. 377 (1992) and the references therein.10.1016/0167-5729(92)90006-WGoogle Scholar
15. Madhukar, A., Thin Solid films 231, 8 (1993).10.1016/0040-6090(93)90701-PGoogle Scholar
16. Xiang, Q.. Li, S.Z.. Wang, D.W. and Wang, K.L., J. Vac. Sci. Technol. B 14, 238 (1996).10.1116/1.588866Google Scholar
17. Vescan, L., Phantoms Newsletter 16. 1 (1999).Google Scholar