Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-06-21T06:14:33.384Z Has data issue: false hasContentIssue false
  • English
  • Français

The Mechanism of the Plasma Induced Deposition of a-Ge and μc-Ge from Germane: The limits and Possible Alternatives

Published online by Cambridge University Press:  16 February 2011

F. Glatz ,
R. Konwitschny ,
M.G.J. Vepřek-Heijman  and
S. Vepřek
F. Glatz
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich Lichtenbergstr. 4, D-85747 Garching/Munich, Germany
R. Konwitschny
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich Lichtenbergstr. 4, D-85747 Garching/Munich, Germany
M.G.J. Vepřek-Heijman
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich Lichtenbergstr. 4, D-85747 Garching/Munich, Germany
S. Vepřek
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich Lichtenbergstr. 4, D-85747 Garching/Munich, Germany
Get access

Abstract

Time resolved mass spectrometry and the measurement of appearance potentials of various GeH -cationic fragments combined with selfconsistent theoretical modelling have been used to study the mechanism of plasma induced deposition of germanium. It is shown, that the high rate deposition occurs via germylene, GeH as the direct precursor. Digermane May play some role only at low deposition rates. Although we could reproduce the best values of theμτ product reported so far, no further improvement could be achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 499
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] a: Votintsev, V.N., Zaslonko, I.S., Mikheev, V.S. and Smirnov, V.N., Kinetika i Kataliz 26, 1297 (1984)Google Scholar
b: Newman, C.G., Dzarnoski, J., Ring, M.A. and O'Neal, H.E., Int. J. Chem. Kin. XII, 661 (1980)CrossRefGoogle Scholar
[2] Veprek, S. and Heintze, M., Plasma Chem. Plasma Process. 10, 3 (1990)Google Scholar
[3] Veprek, S., Schopper, K., Ambacher, O., Rieger, W. and Veprek-Heijman, M.G.J., J. Electrochem. Soc. 140, 1935 (1993)CrossRefGoogle Scholar
[4] Wagner, J.J. and Veprek, S., Plasma Chem. Plasma Process. 3, 219 (1983)CrossRefGoogle Scholar
[5] Saalfeld, F.E. and Svec, H.E., Inorg. Chem. 2, 46 (1963)CrossRefGoogle Scholar
[6] Glatz, F., Konwitschny, R. and Veprek, S., J. Non-Cryst. 137&138, 779 (1991)Google Scholar
[7] Karg, F.H., Hirschauer, B., Kasper, W. and Pierz, K., Solar Energy Mater. 22, 169 (1991)CrossRefGoogle Scholar
[8] Glatz, F., Veprek, S., Klingan, F.-R. and Herrmann, W.-A., this VolumeGoogle Scholar