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Mechanism of Reactive Ion Etching of Polymeric Films in Oxygen-Based Plasmas

Published online by Cambridge University Press:  22 February 2011

Sandra W. Graham  and
Christoph Steinbrüchel
Sandra W. Graham
Affiliation:
Materials Engineering Dept. and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
Christoph Steinbrüchel
Affiliation:
Materials Engineering Dept. and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

The etching of polymeric films in O2 plasmas containing small amounts of CF4 has been studied at low pressures (10–60 mtorr) in an RIE reactor. The relationship between etch rate, ion flux, and O atom concentration is investigated for photoresist, polyimide, and amorphous carbon. The applicability of a surface-chemical model proposed by Joubert, et al. (J. Appl. Phys. 65(12) 1989, 5096) is explored. Modifications to the model are made to include physical sputtering and direct reactive ion etching. The modified model provides an improved description of the process, showing the various contributions of the ions and O atoms to the overall etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 617
Copyright
Copyright © Materials Research Society 1993

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References

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