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Mechanism of Laser-Enhanced Etching of Silicon

Published online by Cambridge University Press:  21 February 2011

F. A. Houle
F. A. Houle*
Affiliation:
IBM Research Laboratory, 1500 Cottle RoadSan Jose, California 95193
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Abstract

Recent studies of the laser-enhanced etching of silicon by XeF2 have demonstrated that rapid reaction rates are attributable to intrinsic effects of above band gap radiation, that is, that photo-generated charge carriers influence the etching reaction. The mechanism proposed to account for this is described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 203
Copyright
Copyright © Materials Research Society 1984

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References

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