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Mechanism of Diamond Growth on Carbide Substrates Using Fluorocarbon Gases

Published online by Cambridge University Press:  15 February 2011

K.J. Grannen  and
R.P.H. Chang
K.J. Grannen
Affiliation:
Northwestern University, Department of Materials Science & Engineering, Evanston, IL 60208–3108.
R.P.H. Chang
Affiliation:
Northwestern University, Department of Materials Science & Engineering, Evanston, IL 60208–3108.
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Abstract

The etching and growth behavior of diamond in CxFy / O2 / H2 plasmas have been investigated. Using this gas Mixture, diamond can nucleate on untreated tungsten carbide and silicon carbide substrates up to a density of 108 crystallites/cm2. This compares to a density of 102 crystallites/cm2 when using a methane gas mixture and these same substrates. The increase in nucleation density is attributed to the selective etching of the non-carbon component of the carbide with subsequent nucleation on the carbon enriched surface. The effect of temperature on the nucleation rate has been studied with a lower nucleation density at higher growth temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 511
Copyright
Copyright © Materials Research Society 1994

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References

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