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Mechanically Biased Self-Assembly of Quantum Dots by Nanoindentation

Published online by Cambridge University Press:  01 February 2011

Curtis R. Taylor ,
Ajay Malshe ,
Eric Stach ,
Euclydes Marega  and
Gregory Salamo
Curtis R. Taylor
Affiliation:
crtaylor@vcu.edu, Virginia Commonwealth University, Mechanical Engineering, 601 West Main St., P.O. Box 843015, Richmond, Virginia, 23284-3015, United States, 804-827-7025
Ajay Malshe
Affiliation:
apm2@engr.uark.edu, University of Arkansas, Mechanical Engineering, Fayetteville, Arkansas, 72701, United States
Eric Stach
Affiliation:
eastach@purdue.edu, Purdue University, Materials Engineering, West Lafayette, Indiana, 47907, United States
Euclydes Marega
Affiliation:
euclydes@if.sc.usp.br, University of Sao Paulo, Physics, Sao Paulo, N/A, CEP 13560-970, Brazil
Gregory Salamo
Affiliation:
salamo@uark.edu, University of Arkansas, Physics, Fayetteville, Arkansas, 72701, United States
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Abstract

Nanoindentations were created in the GaAs(100) surface to act as strain centers to bias the nucleation of self-assembled InAs quantum dots providing for patterned growth. Indents were generated using loads below 450 μN with a sharp cube corner indenter. Growth of InAs quantum dots on indent patterns is performed using molecular beam epitaxy (MBE). The effect of indent spacing and size on the patterned growth is investigated. The structural analysis of the quantum dots including spatial ordering, size, and shape are characterized by ex-situ atomic force microscopy (AFM). Results reveal that the indent patterns clearly bias nucleation with dot structures selectively growing on top of each indent. It is speculated that the biased nucleation is due to a combination of favorable surface strain and multi-atomic step formation at the indent sites, which leads to increased adatom diffusion on the patterned area.

Keywords

epitaxyself-assemblysemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 921: Symposium T – Nanomanufacturing , 2006 , 0921-T07-07
Copyright
Copyright © Materials Research Society 2006

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References

1. Leon, R., Chaparo, S., Johnson, C., Navarro, X., Zhang, Y., Siegert, J., Marcinkevicius, S., Liao, X., and Zou, J., J. Appl. Phys. 91, 5826–5830 (2002).Google Scholar
2. Leroy, F., Eymery, J., and Gentile, P., Appl. Phys. Lett. 80, 3078–3080 (2002).Google Scholar
3. Ross, F. M., IBM J. Res. Develop 44, 489–501 (2000).Google Scholar
4. Shiryaev, S.Y, Jensen, F., Hansen, J., Petersen, J., and Larsen, A., Phys. Rev. Lett. 78, 503–506 (1997).Google Scholar
5. Taylor, C., Prince, R., Malshe, A., Riester, L., Salamo, G., Oh Cho, S., Journal of Smart Materials and Structures 14, 963–970 (2005).Google Scholar
6. Ishikawa, T., Kohmoto, S., Asakawa, K., Appl. Phys. Lett., 73(12), 1712–1714 (1998).Google Scholar