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Mechanical and Structural Properties of TiC and TiCN Thin Films Grown by RF Sputtering

Published online by Cambridge University Press:  10 February 2011

A. Mani ,
P. Aubert ,
H. Khodja  and
P. Houdy
A. Mani*
Affiliation:
Laboratoire d'étude des Milieux Nanométriques, Université d'Evry, 91025 Evry, France.
P. Aubert
Affiliation:
Laboratoire d'étude des Milieux Nanométriques, Université d'Evry, 91025 Evry, France.
H. Khodja
Affiliation:
Laboratoire Pierre Süe, CEA/DSM 91191, Gif sur Yvette, France.
P. Houdy
Affiliation:
Laboratoire d'étude des Milieux Nanométriques, Université d'Evry, 91025 Evry, France.
*
*Corresponding author: abderahim.mani@bp.univ-evry.fr (A. Mani)
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Abstract

TiC and TiCN thin films were deposited by RF sputtering from a TiC target. For TiC thin films, the various sputtering pressure were carried out in order to observe the influence of this parameter on structural and mechanical properties. The experimental results show that a pressure of 1 Pa is necessary to obtain stoichiometric films with <111> texture. Lower pressures induce the formation of distorted titanium carbide, while RBS spectra show that the Ti/C ratio is constant for all these samples. Both the compressive stress and the hardness exhibited a maximum value for the lowest pressures. For TiCN thin films, the composition and the hardness were investigated as function of the N2 partial pressure (PN2 = 3% to 70%).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 778: Symposium U – Mechanical Properties Derived from Nanostructuring Materials , 2003 , U6.13
Copyright
Copyright © Materials Research Society 2002

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