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Measurements Of Stress Evolution During Thin Film Deposition

Published online by Cambridge University Press:  15 February 2011

E. Chason  and
J. A. Floro
E. Chason
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1415
J. A. Floro
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1415
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Abstract

We have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity to vibration is reduced and a radius of curvature limit of 4 km has been obtained in situ. This technique also enables us to obtain a 2-dimensional profile of the surface curvature from the simultaneous reflection of a rectangular array of beams. Results from the growth of SiGe alloy films are presented to demonstrate the unique information that can be obtained during growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 499
Copyright
Copyright © Materials Research Society 1996

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