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Measurements of 1/f Noise in A-Si:H Pin Diodes and Thin-Film-Transistors

Published online by Cambridge University Press:  25 February 2011

Gyuseong Cho ,
J. S. Drewery ,
I. Fujieda ,
T. Jing ,
S. N. Kaplan ,
V. Perez-Mendez ,
S. Qureshi ,
D. Wildermuth  and
R. A. Street
Gyuseong Cho
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
J. S. Drewery
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
I. Fujieda
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
T. Jing
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
S. N. Kaplan
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
V. Perez-Mendez
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
S. Qureshi
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
D. Wildermuth
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
R. A. Street
Affiliation:
Xerox PARC, Palo Alto, CA 94304
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Abstract

We measured the equivalent noise charge of a-Si:H pin diodes (5 ∼ 45 μm i-layer) with a pulse shaping time of 2.5 μ.sec under reverse biases up to 30 V/μm and analyzed it as a four component noise source. The frequency spectra of 1/f noise in the soft-breakdown region and of the Nyquist noise from contact resistance of diodes were measured. Using the conversion equations for a CR-RC shaper, we identified the contact resistance noise and the 1/f noise as the main noise sources in the low bias and high bias regions respectively. The 1/f noise of a-Si:H TFTs with channel length of 15 μm was measured to be the dominant component up to ∼100kHz for both saturation and linear regions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 393
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

Perez-Mendez, V., et al., Nucl. Instr. and Meth., A260, 195 (1987)Google Scholar
Perez-Mendez, V., et al., Nucl. Instr. and Meth.,. A273, 127 (1988)Google Scholar
[3] Perez-Mendez, V., et al., MRS. Symp. Proc. 149, 621 (1989)Google Scholar
[4] Equer, B. and Karar, A., Nucl. Instr. and Meth., A271, 574 (1988)Google Scholar
[5] Pochet, T., et al., MRS. Symp. Proc. 149, 661 (1989)Google Scholar
[6] Bathaei, F.Z. and Anderson, J.C., Phil. Mag., B 55, 87 (1987)Google Scholar
[7] Bathaei, F.Z., et al., Phil. Mag., B 57, 259 (1988)Google Scholar
[8] D‘Amico, A., et al., J. Non-Cryst. Sol., 77 & 78, 499 (1985)Google Scholar
[9] Gibson, R.A., et al., Appl. Phys., 21, 307 (1980)Google Scholar
[10] Goulding, F.S. and Landis, D.A., IEEE Trans. Nuc. Sci., 29, 1125 (1982)Google Scholar
[11] Hooge, F.N., Rep. Prog. Phys., 44 479 (1981)Google Scholar
[12] Hack, M., et al., IEEE Trans. Elect. Dev., 36, 2764 (1989)Google Scholar
[13] Shur, M., et al., J. Appl. Phys., 66, 3371 (1989)Google Scholar
[14] Gray, P.R. and Meyer, R.G., Analysis and Design of Analog ICs John Wiley and Sons, (2nd Ed.), pp.647, New York (1984)Google Scholar
[15] Mutoh, N., et al., Solid State Electronics, 31, 1675 (1988)Google Scholar