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Mbe-Growth of InAs and GaSb Epitaxial Layers on GaAs Substrates

Published online by Cambridge University Press:  28 February 2011

J. R. Söderström ,
D.H. Chow ,
T.C. McGill  and
T.J. Watson Sr
J. R. Söderström
Affiliation:
On leave from: Chalmers University of Technology, Phys. Dept., S-412 96 Göteborg, Sweden
D.H. Chow
Affiliation:
Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
T.C. McGill
Affiliation:
Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
T.J. Watson Sr
Affiliation:
Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
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Abstract

We have grown a number of InAs and GaSb bulk layers on GaAs substrates and studied the properties of the semiconductor films as a function of the various growth parameters. Preliminary results from GaSb growth are presented in addition to an extensive study of InAs growth. The films were characterized during growth by RHEED. RHEED-oscillations were observed during both InAs and GaSb growths. Hall effect measurements yielded peak electron mobilities for InAs of 18,900 cm2/Vs at 300 K and 35,000 cm2/Vs at 77 K. For GaSb the as grown layers were found to be p-type with a carrier concentration of 9x1015cm-3 and a hole mobility of 910 cm2 /Vs at 300 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 409
Copyright
Copyright © Materials Research Society 1989

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