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Mbe Growth pf Ca5Sr5F2 on (100), (111), (511), and (711) GaAs Surfaces

Published online by Cambridge University Press:  25 February 2011

K. Young ,
S. Horng ,
A. Kahn  and
Julia M. Phillips
K. Young
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
S. Horng
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
A. Kahn
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

We have used molecular beam epitaxy to grow CaxSr1−xF2 films of various thicknesses on GaAs substrates with different orientations, i.e. (100), (111)A, (511)A, (511)B, (711)A and (711)B. On all orientations, the same crystallographic direction is normal to the surface in both the substrate and fluoride film. For all orientations except (111), the fluoride surface is reconstructed with (111) facets. Without annealing, the best crystallinity is obtained for the (100), (111) and (511)B orientations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 185
Copyright
Copyright © Materials Research Society 1989

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