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MBE GROWTH OF NON-LATTICE MATCHED (BaCa)F2, (Pb,Sn)Se/(Ba,Ca)F 2 AND CdTe/(Ba,Ca)F2 ON Si SUBSTRATES

Published online by Cambridge University Press:  28 February 2011

H. ZOGG ,
P. MAIER  and
P. NORTON
H. ZOGG
Affiliation:
Swiss Federal Institute of Technology, AFIF, CH-8093 Zürich, Switzerland
P. MAIER
Affiliation:
Swiss Federal Institute of Technology, AFIF, CH-8093 Zürich, Switzerland
P. NORTON
Affiliation:
Fraunhofer Institut f. phys. Messt., D-7800 Freiburg, Fed. Rep. of Germany
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Abstract

Graded (Ca,Ba)F2 layers consisting of near lattice matched CaF2 at the Si interface and of BaF2 with 14% increased lattice constant at the top surface were grown by molecular beam epitaxy (MBE) on Si(111). Smooth and crackfree layers exhibiting Rutherford backscattering (RBS) channeling minima below 5% were obtained. Device quality epitaxial layers of PbTe, PbSe and (Pb,Sn)Se were grown on top of these structures. Mechanical stress at 300K was relaxed by athermal mechanisms in the fluoride- as well as in the Pb-salt films. - In preliminary runs, epitaxial CdTe-layers were obtained on Si(111) using the same fluoride-buffer film technique and which showed clear SEM electron channeling patterns.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 253
Copyright
Copyright © Materials Research Society 1986

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References

[1] Farrow, R.F.C., Sullivan, P.W., Williams, G.M., Jones, G.R., Cameron, D.C., J. Vac. Sci. Technol. 19, 415, 1981.CrossRefGoogle Scholar
[2] Asano, T., Ishiwara, H., Jap. J. Appl. Phys. Suppl 21-1, 187, 1982.Google Scholar
[3] Siskos, S., Fontaine, C., Munoz-Yague, A., Appl. Phys. Lett. 44, 1146, 1984.CrossRefGoogle Scholar
[4] Phillips, J. M., Augustynjak, W. M., Proc. Mat. Res. Soc. Meeting, Boston, Dec. 1985, to be published.Google Scholar
[5] Asano, T., Kuriyama, Y., Ishiwara, H., Electron. Lett. 24, 386, 1985.Google Scholar
[6] Onoda, H., Katoh, T., Hirashita, N., Sasaki, M., Techn. Digest IEDM, Washington D.C. Dec. 1985, p. 680.Google Scholar
[7] Schowalter, L.J., Fathauer, R.W., AVS nat. Symp., Nov. 1985, to be published.Google Scholar
[8] Zogg, H., Vogt, W., Melchior, H., Infrared Phys. 25, 333, 1985.CrossRefGoogle Scholar
[91 Zogg, H., HUppi, M., Appl. Phys. Lett. 47, 133, 1985.CrossRefGoogle Scholar
[10] Holloway, H., Phys. Thin Films 11, 105, 1981.Google Scholar
[11] Zogg, H., Norton, P., Techn. Digest IEDM, Washington D.C. Dec. 1985, p. 121.Google Scholar
[12] Sullivan, P.W., Farrow, R.F.C., Jones, G.R., J. Cryst. Growth 60, 403, 1982.CrossRefGoogle Scholar
[13] Zogg, H., Vogt, W., Melchior, H., Proc. SPIE 587, to be published.Google Scholar
[14] Zogg, H., Maier, P., Ospelt, M., Thin Solid Films 129, 329, 1985.Google Scholar
[15] Hashimoto, S., Peng, J.-L., Gibson, W.M., Schowalter, L.J., Fathauer, R.W., Appl. Phys. Lett. 47, 1071, 1985.CrossRefGoogle Scholar