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MBE Growth and Characterization of Small Band Gap HgTe-HgCdTe Superlattices.

Published online by Cambridge University Press:  21 February 2011

Y. Lansari ,
Z. Yang ,
S. Hwang ,
J.W. Cook Jr  and
J.F. Schetzina
Y. Lansari
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
Z. Yang
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
S. Hwang
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
J.W. Cook Jr
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
J.F. Schetzina
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

A series of modulation-doped small-band-gap HgTe-Hg1−xCdxTe superlattices (SLs) have been grown by photoassisted MBE. N-type or p-type conductivity was obtained in the modulation-doped samples by incorporating either In or As dopant atoms in the barrier layers, respectively. The electrical and optical properties that these new multilayered quantum well structures display will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 363
Copyright
Copyright © Materials Research Society 1990

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References

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