Hostname: page-component-77c89778f8-fv566 Total loading time: 0 Render date: 2024-07-19T02:53:49.914Z Has data issue: false hasContentIssue false
  • English
  • Français

Materials Issues in the Development of High Data-Transfer-Rate Phase-Change Compounds

Published online by Cambridge University Press:  21 March 2011

Martijn H.R. Lankhorst  and
Herman J. Borg
Martijn H.R. Lankhorst
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656AA, Eindhoven, The Netherlands, (Martijn.Lankhorst@philips.com)
Herman J. Borg
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656AA, Eindhoven, The Netherlands
Get access

Abstract

A model is presented to calculate glass-transition temperatures. This model in combination with experimental data is used to evaluate archival-life stability of common phase change materials Ge2Sb2Te5 and doped eutectic Sb2Te compositions.

On the basis of this model, novel high-data-rate phase change compositions have been identified near and on the pseudo-binary line InSb-GaSb in the ternary system Ga-In-Sb.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 674: Symposia T/U/V – Applications of Ferromagnetic and Optical Materials, Storage and Magnetoelectronics , 2001 , V1.4
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Lankhorst, M.H.R., ‘Modeling of glass transition temperatures of phase-change materials for optical recording’, submitted to J. Non-Cryst.Solids, (2001)Google Scholar
[2]Zhou, G.F., Borg, H.J., Rijpers, J.C.N., Lankhorst, M.H.R. and Horikx, J.J.L., Proceedings of SPIE, ‘Optical Data Storage 2000’, 4090, 108–115 (2000)10.1117/12.399337Google Scholar
[3]Gravesteijn, D.J., Applied Optics, 27, 736, (1988)Google Scholar
[4]Coombs, J.H., Jongenelis, A.P.J.M, Es-Spiekman, W. van, and Jacobs, B.A.J., J. Appl. Phys., 78, 4906, (1995)Google Scholar