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Materials Issues in Molecular Beam Epitaxy

Published online by Cambridge University Press:  22 February 2011

J.Y. Tsao
J.Y. Tsao*
Affiliation:
Sandia National Laboratories Dept 1311-0603 Albuquerque, NM 87185-0603
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Extract

The technology of crystal growth has advanced enormously during the past two decades; among those advances, the development and refinement of molecular beam epitaxy (MBE) has been among the most important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today form the basis for many of the most advanced device structures in solid-state physics, electronics and optoelectronics.

In addition toits numerous device applications, MBE is also an enormously rich and interesting area ofmaterials science in and of itself. In this paper, we discuss a few examples of some of these materials issues, organized according to whether they involve bulk, thin films, orsurfaces [1].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 3
Copyright
Copyright © Materials Research Society 1994

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References

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