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Materials and Interface Optimization of Heterojunction Silicon (HIT) Solar Cells Using in-situ Real-Time Spectroscopic Ellipsometry

Published online by Cambridge University Press:  21 March 2011

D.H. Levi ,
C.W. Teplin ,
E. Iwaniczko ,
R.K. Ahrenkiel ,
H.M. Branz ,
M.R. Page ,
Y. Yan ,
Q. Wang  and
T.H. Wang
D.H. Levi
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401, USA
C.W. Teplin
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401, USA
E. Iwaniczko
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401, USA
R.K. Ahrenkiel
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401, USA
H.M. Branz
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401, USA
M.R. Page
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401, USA
Y. Yan
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401, USA
Q. Wang
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401, USA
T.H. Wang
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401, USA
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Abstract

We have applied real-time spectroscopic ellipsometry (RTSE) as both an in-situ diagnostic and post-growth analysis tool for hydrogenated amorphous silicon (a-Si:H)/crystalline silicon (c-Si) heterojunction with intrinsic thin-layer (HIT) solar cells grown by hot-wire chemical vapor deposition. RTSE enables precise thickness control of the 5 to 25 nm layers used in these devices, as well as monitoring crystallinity and surface roughness in real time. Utilizing RTSE feedback, but without extensive optimization, we have achieved a photovoltaic energy conversion efficiency of 14.1% on an Al-backed p-type Czochralski c-Si wafer coated with thin i and n layers on the front. Open-circuit voltages above 620 mV indicate effective passivation of the c-Si surface by the a-Si:H intrinsic layer. Lifetime measurements using resonant coupled photoconductive decay indicate that surface recombination velocities can approach 1 cm/s. RTSE and transmission electron microscopy show that the intrinsic a-Si:H i-layers grow as a mixture of amorphous and nano-crystalline silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A8.3
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1 Wakisaka, K., Taguchi, M., Sawada, T., Tanaka, M., Matsuyama, T., Matsuoka, T., Tsuda, S., Nakano, S., Kishi, Y., Kuwano, T., Conference Record, 22nd PVSC, Las Vegas, 887–892 (1991).Google Scholar
2 Kawamoto, K., Nakai, T., Baba, T., Taguchi, M., Sakata, H., Tsuge, S., Uchihashi, K., Tanaka, M., and Kiyama, S., Technical Digest 12th Intern. PVSEC, Korea, 289–290 (2001).Google Scholar
3 Jensen, N., Hausner, R.M., Bergmann, R.B., Werner, J. H., and Rau, U., Prog. Photovolt. Res. Appl., 1–13 (2002).Google Scholar
4 Stangl, R., Froitzheim, A., Elstner, L., and Fuhs, W., 17th EPVSEC, Munich, 345, (2001).Google Scholar
5 Wang, Q., Page, M. R., Xu, X. Q., Iwaniczko, E., Williams, E., and Wang, T. H., Thin Solid Films 430, 208–211(2003).Google Scholar
6 Ahrenkiel, R.K., Keyes, B.M., and Johnston, S., Surface Engineering 16, 54(2000).Google Scholar
7 Cody, G.D. In: Pankove, J.I. (Ed.), Semiconductors and Semimetals, Vol. 21, Part B, Academic Press, New York, 1984, p11.Google Scholar
8 Ferlauto, A.S., Ferreira, G.M., Chen, C., Rovira, P.I., Wronski, C.R., Collins, R.W., Deng, X., Ganguly, G., Photovoltaics for the 21st Century II, ed McConnell, R.D., 199–228(2001).Google Scholar
9 Takato, H., Sakata, I., Shimokawa, R., to be published in Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, (2003).Google Scholar
10 Ahrenkiel, R. K. and Dashdorj, J., European Journal of Physics (in press).Google Scholar