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Materials and Device Characteristics of InAlAs/InGaAs HEMTs

Published online by Cambridge University Press:  25 February 2011

Pin Ho ,
M. Y. Kao ,
P. C. Chao ,
K. H. G. Duh ,
P. M. Smith ,
P. A. Martin ,
S. M. J. Liu ,
K. C. Hwang ,
J. M. Ballingall  and
T. Yu
...Show all authors
Pin Ho
Affiliation:
Electronics Laboratory General Electric Company Syracuse, New York 13221
M. Y. Kao
Affiliation:
Electronics Laboratory General Electric Company Syracuse, New York 13221
P. C. Chao
Affiliation:
Electronics Laboratory General Electric Company Syracuse, New York 13221
K. H. G. Duh
Affiliation:
Electronics Laboratory General Electric Company Syracuse, New York 13221
P. M. Smith
Affiliation:
Electronics Laboratory General Electric Company Syracuse, New York 13221
P. A. Martin
Affiliation:
Electronics Laboratory General Electric Company Syracuse, New York 13221
S. M. J. Liu
Affiliation:
Electronics Laboratory General Electric Company Syracuse, New York 13221
K. C. Hwang
Affiliation:
Electronics Laboratory General Electric Company Syracuse, New York 13221
J. M. Ballingall
Affiliation:
Electronics Laboratory General Electric Company Syracuse, New York 13221
T. Yu
Affiliation:
Electronics Laboratory General Electric Company Syracuse, New York 13221
A. W. Swanson
Affiliation:
Electronics Laboratory General Electric Company Syracuse, New York 13221
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Abstract

High electron mobility transistors (HEMTs) based on the InAlAs/InGaAs heterostructure have been grown on InP by molecular beam epitaxy. At room temperature, typical sheet charge densities of 2.1–3.0×1012 cm−2 and Hall electron mobilities over 10000 cm2 /V-s are obtained. An electron mobility as high as 13000 cm2 /V-s is achieved with a pseudomorphic Iny Ga1−y As channel and a y value of 0.70.

HEMTs with a T- or Γ-shaped gate and with gate lengths ranging from 0.1–0.25 urn have been fabricated. A record low noise figure of 0.7 dB with an associated gain of 8.6 dB at 62 GHz has been achieved with 0.1 μm Γ-gate devices, while T-gate devices exhibit a minimum noise figure of 1.2 dB with 7.2 dB associated gain at 94 GHz. Separately, a record fmax value of 455 GHz was determined by extrapolating at -6 dB/octave from the measured gain of 13.6 dB at 95 GHz.

Power HEMTs using a double heterojunction structure exhibit a record peak power-added efficiency (P.A.E.) of 49% with 8.6 dB power gain and 0.30 W/mm power density measured at 60 GHz. When biased and tuned for maximum output power, our best 60 GHz output power density to date is 0.52 W/mm with 33% P.A.E. and 5.9 dB power gain using a single heterojunction HEMT scheme with pseudomorphic channel. A similar device also yields peak P.A.E. of 26% with 0.20 W/mm power density and 4.9 dB gain at 94 GHz. These results represent the highest P.A.E.S and power gains ever reported for any transistor at these frequencies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 251
Copyright
Copyright © Materials Research Society 1993

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References

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