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Material Requirements For High Voltage, High Power Igbt Devices

Published online by Cambridge University Press:  10 February 2011

R. Zehringer ,
A. Stuck  and
T. Lang
R. Zehringer
Affiliation:
ABB Corporate Research Ltd., Baden-Dättwil, Switzerland
A. Stuck
Affiliation:
ABB Corporate Research Ltd., Baden-Dättwil, Switzerland
T. Lang
Affiliation:
ABB Semiconductors AG, Fabrikstr. 3, 5600 Lenzburg, Switzerland
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Abstract

The two basic package types of current IGBT modules, which evolved from opposing requirements of traction and power transmission applications, are presented. It is shown that reliability and lifetime aspects given by traction puts most stringent limitations on the choice of materials at given cost targets. The materials used today for high power packaging and the future developments of high power IGBT-packages are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 369
Copyright
Copyright © Materials Research Society 1998

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