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Material and Electrical Properties of Gate Dielectrics Grown by Rapid Thermal Processing

Published online by Cambridge University Press:  26 February 2011

J. Nulman ,
J. P. Krusius  and
P. Renteln
J. Nulman
Affiliation:
School of Electrical Engineering and National Research and Resource Facility for Submicron Structures, Cornell University, Ithaca, NY 14853.
J. P. Krusius
Affiliation:
School of Electrical Engineering and National Research and Resource Facility for Submicron Structures, Cornell University, Ithaca, NY 14853.
P. Renteln
Affiliation:
School of Material Science and Engineering, Cornell University, Ithaca, NY 14853.
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Abstract

The material and electrical characteristics of silicon dielectric films prepared via Rapid Thermal Processing (RTP) are described. A commercial RTP system with heat provided by tungsten-halogen lamps was used. Silicon dioxide films were grown in pure oxygen and in oxygen with 4% hydrogen chloride ambients. As grown films were either annealed in a nitrogen ambient or nitrided in an ammonia ambient. Film thickness ranges from 4 to 70 nm for RTP times from 0 to 300 s at 1150 C. Current-voltage and capacitance-voltage methods were used for electrical characteristics. Ellipsometry, Auger and TEM were used for material characterization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 341
Copyright
Copyright © Materials Research Society 1986

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