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Maskless Deposition of a Micropattern on a Wafer by Liquid Flow

Published online by Cambridge University Press:  25 February 2011

S. Mil’shtein  and
C. Fournier
S. Mil’shtein
Affiliation:
Electrical Engineering Department, University of Lowell, Lowell, MA 01854
C. Fournier
Affiliation:
Electrical Engineering Department, University of Lowell, Lowell, MA 01854
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Abstract

Metalization patterns of micron size were deposited chemically on GaAs wafers with no litography masks by means of controlled laminar flow of liquid NaOCl. Iron used for metalization was dissolved in NaOCl wafer solution. To interrupt the continuous deposition of metal on semiconductor surface, the acrylic polymer was also dissolved in the liquid. Iron deposition appears to follow given crystalographic direction <110> creating a set of parallel lines in <110> direction. Spacing between the lines and width of the metallic lines are controlled by the temperature of the process, speed of liquid flow and percentage of polymer present in the solution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 475
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Mil’shtein, S. and Fournier, C., Materials Letters, Vol. 5, No. 7,8 (1987) 258–259.Google Scholar
2. Mil’shtein, S. and Fournier, C., U.S. Patent Pending, Ser. No. 07/152, 155 2/4/88.Google Scholar
3. Mil’shtein, S. and Fournier, C., Materials Letters, will be published (1990).Google Scholar