Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-28T11:22:14.268Z Has data issue: false hasContentIssue false
  • English
  • Français

Manufacturability Issues for Application of Silicides In 0.25 μm CMOS Process and Beyond

Published online by Cambridge University Press:  15 February 2011

Q. F. Wang ,
A. Lauwers ,
F. Jonckx ,
M. de Potter ,
Chun-Cho Chen  and
K. Maex
Q. F. Wang
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
A. Lauwers
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
F. Jonckx
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
M. de Potter
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Chun-Cho Chen
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Get access

Abstract

Key issues associated with the self-aligned silicide technology, such as formation of silicides on narrow poly gate, shallow silicided junction formation, gate to source/drain bridging, and interface contact resistance, are discussed. The comparison of important technological aspects for TiSi2 and CoSi2 is presented. The emphasis of this work is focused on the CoSi2 salicide technology with different variations, namely conventional process, Co/Ti capping process, and Ti/Co process. Based on the experimental results, CoSi2 should be considered as an attractive alternative to TiSi2 for the applications in sub-0.25 μm ULSI integrated circuits.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 221
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Shibata, T., Hieda, K., Sato, M., Konaka, M., Dang, R.L.M., and Iizuka, H., IEDM Tech. Digest, p. 647 (1981).Google Scholar
2. Osburn, C.M., Tsai, M.Y., Roberts, S., Luechese, C.J., and Ting, C.Y., Proc. 1st Int. Symp. On VLSI Sci. and Tech., Electrochemical Society, 82– 1, p. 213 (1982).Google Scholar
3. Lau, C.K., See, Y.C., Scott, D.B., Bridges, J.M., Perna, S.M., and Davies, R.D., IEDM Tech. Digest, p. 714 (1982).Google Scholar
4. Lasky, J.B., Nakos, J.S., Cain, O.J., and Geiss, P.J., IEEE Trans. Electron Devices, ED-38, p. 262 (1991).Google Scholar
5. Sakai, I., Kanaguchi, H., Hirayama, T., Johansson, L.E.G., and Okabe, K., Proc. Symp. on VLSI Technology, p. 66 (1992).Google Scholar
6. Wang, Q.F., Lauwers, A., Deweerdt, B., and Maex, K., Proceedings of ESSDERC'94, p. 283 (1994).Google Scholar
7. Wei, C.S., Fraser, D.B., Dass, M.L.A. and Brat, T., Proc. VLSI Multilevel Interconnection Conference ( VMIC ), p. 233 (1990).Google Scholar
8. Hsia, S.L., Tan, T.Y., Smith, P.L. and McGuire, D.E., J. Appl. Phys. (70), p. 7579 (1991).Google Scholar
9. Hong, F., Rozgonyi, G., and Patnaik, B., Appl. Phys. Lett. 61, p. 1591 (1992).Google Scholar
10. Berti, A.C., Bolkhovsky, V., Proc. VLSI Multilevel Interconnection Conference ( VMIC ), p. 267 (1992).Google Scholar
11. Goto, K., Yamazaki, T., Fushida, A., Inagaki, S., and Yagi, H., Proceedings of Symposium on VLSI Technology, p. 119 (1994).Google Scholar
12. Wang, Q.F., Maex, K., Kubicek, S., Jonckheere, R., Kerkwijk, B., Verbeeck, R., Biesemans, S. and De Meyer, K., Tech. Digest Symp. on VLSI technology, p. 17 (1995).Google Scholar
13. Wang, Q.F., Lauwers, A., Deweerdt, B., Verbeeck, R., Loosen, F., and Maex, K., IEEE Trans. Semiconductor Manufacturing, vol.8, No.4, (1995).Google Scholar
14. Broadbent, E.K., Delfino, M., Morgan, A.E., Sadana, D.K., and Maillot, P., IEEE Electron Device Lett. EDL 8, p. 318 (1987).Google Scholar
15. Maex, K. and Dekeermaecker, R., Proc. 14 th ESSDERC, Sept., (1984).Google Scholar
16. Kwong, D.L. and Alvi, N.S., J. Appl. Phys. vol.60, p. 688 (1986).Google Scholar
17. Morgan, A.E., Broadbent, E.K., Delfinio, M., Coulman, B., and Sadana, D.K., J. Electrochem. Soc., vol.134, p. 92 5 (1987).Google Scholar
18. Shone, F.C., Saraswat, K.C., and Plummer, J.D., IEDM Tech. Digest, p. 407 (1985).Google Scholar
19. Liu, R., Williams, D.S., and Lynch, W.T., J. Appl. Phys. vol.63, p. 1990 (1988).Google Scholar
20. Amm, D.T., Levy, D., Paoli, M., Delpech, P., Ternisen, T., d'Ouville, , Mingam, H., and Goltz, G., ESSDERC, p. 561 (1989).Google Scholar
21. Chu, C.L., Chin, G., Saraswat, K.C., Wong, S.S., and Dutton, R., IEEE Electron Device Lett. EDL-12, p. 696 (1991).Google Scholar
22. Wong, S.S., Bradbury, D.R., Chen, D.C., and Chiu, K.Y., IEDM Tech. Digest, p. 634 (1984).Google Scholar
23. Kotaki, H., Nakano, M., Takegawa, Y., Kakimoto, S., Mori, Y., Mitsuhashi, K., Takagi, J., Tsuchimoto, S., and Akagi, Y., IEDM Tech. Digest, p. 839 (1993).Google Scholar
24. Broadbent, E.K., Irani, R., and Morgan, A.E., Proc. IEEE VMIC, p. 175 (1988).Google Scholar
25. Wei, C.S., Raghavan, G., Lawrence, M., Dass, A., Frost, M., Brat, T., and Fraser, D., Proc. VLSI Multilevel Interconnection Conference ( VMIC ), p. 241 (1989).Google Scholar
26. Lin, J., Banerjee, S., and Lee, J., J. Appl. Phys. 68 (3), p. 1082, (1990).Google Scholar
27. Wen, D.S., Smith, P., Osburn, C.M., and Rozgonyi, G.A., Appl. Phys. Lett. vol.51, p. 1182 (1987).Google Scholar
28. Maex, K. and ven den hove, L., Materials Sci. and Eng. B4, p. 321 (1989).Google Scholar
29. Ting, C.Y., Iyer, S.S., Osburn, C.M., Hu, G.I., and Schweighart, A.M., Tech. Digest VLSI Symp. p. 224 (1982).Google Scholar
30. Knapp, J.A., Picraux, S.T., Wu, C.S. and Lau, S.S., J. Appl. Phys. vol.58, p. 3747 (1985).Google Scholar
31. Lin, M.I. and Wu, C.Y., J. Electrochem. Sco. vol.135, p. 2342 (1988).Google Scholar
32. Wietzer, V.G., Fatemi, N.S., J. Electronic Materials, 13 (1), p. 7 (1989).Google Scholar
33. Hobbs, L.P. and Maex, K., Appl. Surf. Sci., vol.53, p. 321 (1991).Google Scholar
34. Lauwers, A., Ph.D dissertation, Katholieke Universitait Leuven, Leuven, Belgium, August (1995).Google Scholar
35. Wang, Q.F., Lauwers, A., Deweedt, B., Verbeeck, R., and Maex, K., Proc. 5th Int. Symp. On ULSI Sci. and Tech., Electrochem. Soc., 95–5, p. 519 (1995).Google Scholar
36. Davari, B., Taur, Y., Moy, D., d'Heurle, F.M., and Ting, C.Y., Proc. of First Int. Symp. on Ultra Large Scale Integrated Sci. and Tech., The Electrochem. Soc. 87–11, p. 368 (1987).Google Scholar
37. Revesz, P., Gyimesi, J. and Zsoldos, E., J. Appl. Phys. vol.54, p. 1860 (1984).Google Scholar
38. Maex, K., De Keersmaecker, R.F., and Alkemade, P.F.A., Proc. Mat. Res. Soc. Symp. p. 153 (1985).Google Scholar