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Magnetoreflection of Ion-Implanted Bismuth

Published online by Cambridge University Press:  25 February 2011

E. M. Kunoff ,
B. S. Elman  and
M. S. Dresselhaus
E. M. Kunoff
Affiliation:
Department Of Physics;
B. S. Elman
Affiliation:
Department Of Physics;
M. S. Dresselhaus
Affiliation:
Department Of Physics; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Ma 02139, USA
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Abstract

Bi single crystals have been implanted with isoelectronic ions (As, Sb and Bi) and the electronic structur of these implanted materials has been studied using the magnetoreflection technique. Since the ion penetration depth and optical skin depths are of roughly the same magnitude, this technique provides a sensitive test for implantation-induced changes in the electronic structure. Explicitly, the magnetoreflection spectra show changes in lineshape, resonant frequency and in some cases the introduction of Landau level transitions forbidden in unimplanted bismuth. In particular, implantation-induced changes in the resonance lineshapes indicate an increase in plasma frequency as either the fluence of the implants or the ion size is increased. Further analysis of the data shows that the Lax model, which accounts for the magnetoreflection spectra of unimplanted bismuth, is equally applicable to bismuth implanted with isoelectronic ions. Our results yield measurable changes in the L-point band gap and smaller relative changes in the band parameter combination Eg/m* . The mechanism responsible for these changes in the electronic structure of bismuth is suggested.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 553
Copyright
Copyright © Materials Research Society 1984

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References

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