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Magnetic Resonance Studies of High-Resistivity GaN Films Grown on Al2O3

Published online by Cambridge University Press:  10 February 2011

E. R. Glaser ,
T. A. Kennedy ,
A. E. Wickenden ,
D. D. Koleske  and
J. A. Freitas Jr.
E. R. Glaser
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375–5347, glaser@bloch.nrl.navy.mil
T. A. Kennedy
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375–5347, glaser@bloch.nrl.navy.mil
A. E. Wickenden
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375–5347, glaser@bloch.nrl.navy.mil
D. D. Koleske
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375–5347, glaser@bloch.nrl.navy.mil
J. A. Freitas Jr.
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375–5347, glaser@bloch.nrl.navy.mil
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Abstract

We have made an attempt to obtain electronic and atomic structure information on the residual defects that exist in high-resitivity GaN epitaxial layers from optically-detected magnetic resonance (ODMR) experiments performed on the broad 3.0 and 2.2 eV photoluminescence (PL) bands observed from these films. The first observation of magnetic resonance on this 3.0 eV band reveals two ODMR signals. The first resonance is sharp (FWHM ∼ 3.5 mT) with g ∼ 1.950 and is assigned to effective-mass (EM) donors based on previous studies. The second feature is much broader (FWHM ∼18 mT) with a donor-like g-value of ∼ 1.977. This new resonance may be associated with partially EM-like donor states located ∼ 54 - 57 meV below the conduction band edge proposed recently to be involved in this 3.0 eV PL band.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 543
Copyright
Copyright © Materials Research Society 1997

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References

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