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Magnetic and Structural Properties of Iron Nitride thin Films Obtained by Argon-Nitrogen Reactive Radio-Frequency Sputtering

Published online by Cambridge University Press:  15 February 2011

H. Chatbi
Affiliation:
LMPSM-URA-CNRS 155, Université Henry Poincaré BP 239 54506 Vandœuvre Cedex, France
J.F. Bobo
Affiliation:
LMPSM-URA-CNRS 155, Université Henry Poincaré BP 239 54506 Vandœuvre Cedex, France
M. Vergnat
Affiliation:
LMPSM-URA-CNRS 155, Université Henry Poincaré BP 239 54506 Vandœuvre Cedex, France
L. Hennet
Affiliation:
LMPSM-URA-CNRS 155, Université Henry Poincaré BP 239 54506 Vandœuvre Cedex, France
J. Ghanbaja
Affiliation:
LMPSM-URA-CNRS 155, Université Henry Poincaré BP 239 54506 Vandœuvre Cedex, France
O. Lenoble
Affiliation:
LMPSM-URA-CNRS 155, Université Henry Poincaré BP 239 54506 Vandœuvre Cedex, France
Ph. Bauer
Affiliation:
LMPSM-URA-CNRS 155, Université Henry Poincaré BP 239 54506 Vandœuvre Cedex, France
M. Piecuch
Affiliation:
LMPSM-URA-CNRS 155, Université Henry Poincaré BP 239 54506 Vandœuvre Cedex, France
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Extract

Fe-N thin films have attracted considerable attention because they are potential candidates for magnetic recording with their large saturation magnetization and their good corrosion resistance1. It has even been demonstrated that saturation magnetization can be larger than the bulk iron one for low nitrogen contents2. The origin of the enhanced magnetic moment could occur from the metastable α″ Fe16N2 phase or from an expanded bcc FeN structure which is also called α FeN.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Matar, S.F., Demazeau, G. and Siberchicot, B., IEEE Trans. Magn., 26, 60 (1990)Google Scholar
2. Kim, T.K. and Takahashi, M., Appl. Phys. Lett., 20, 492 (1972)Google Scholar
3. Takahashi, M., Shoji, H. and Tsunod, M., J. Magn. Magn. Mater., 134, 403 (1994)Google Scholar
4. Komuro, M., Kozono, Y., Hanazono, M. and Sugita, Y., J. Appl. Phys., 60, 5126 (1990); Y. Sugita, M. Mitsuoka, M. Komuro, H. Yoshiya, Y. Kozono and M. Hanazono, ibid., 70, 5977 (1991)Google Scholar
5. Takahashi, M., Shoji, H., Takahashi, H., Wakiyama, T., Kinoshita, M. and Ohta, W., IEEE Trans. Magn., 29, 3040 (1993)Google Scholar
6. Gao, C. and Shamsuzzoha, M., IEEE Trans. Magn., 29, 3046 (1993)Google Scholar
7. Xiao, J. Q. and Chien, C.L., Appl. Phys. Lett., 64, 384 (1994)Google Scholar
8. Bobo, J.-F., Vergnat, M., Chatbi, H., Hennet, L., Lenoble, O., Bauer, Ph. and Piecuch, M., J. Magn. Magn. Mater., 140–144, 717 (1995)Google Scholar
9. Bobo, J.-F., Chatbi, H., Vergnat, M., Hennet, L., Lenoble, O., Bauer, Ph. and Piecuch, M., J. Appl. Phys. (1995) in pressGoogle Scholar
10. Leapman, R.D., Grunes, L.A. and Fejes, P.L., Phys. Rev. B, 26, 614 (1982)Google Scholar
11. Chen, G.M., Lin, M.X. and Ling, J.W., J. Appl. Phys., 75, 6293 (1994)Google Scholar