Hostname: page-component-848d4c4894-ttngx Total loading time: 0 Render date: 2024-05-01T14:15:05.703Z Has data issue: false hasContentIssue false

Luminescent Porous Silicon Investigated by accelerator analytics

Published online by Cambridge University Press:  25 February 2011

Peter Steiner
Affiliation:
Fraunhofer-institute for solid state technology, Munich, Germany
Jens Weidhaas
Affiliation:
Fraunhofer-institute for solid state technology, Munich, Germany
Walter Lang
Affiliation:
Fraunhofer-institute for solid state technology, Munich, Germany
Get access

Abstract

Electroluminescent nanoporous silicon is investigated by accelerator techniques. Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA) are used to measure the oxygen content. The stoichiometry is Si1O1.8 in the top layer and Si1O0.8 in 6 μm depth. Channeling experiments show that only very weak channels are present.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ortega, C., Siejka, J., Vizkelethy, G., “Characterisation of porous silicon by NRA, RBS and Channeling”, Nucl. Inst. and Methods, B45(1990)Google Scholar
2. Richter, A., Steiner, P., Kozlowski, F., Lang, W., “Current—Induced Light Emission from a Porous Silicon Device”, Electron Device Letters, Vol.12, No 12, Dec. 1991 Google Scholar
3. Richter, A., Lang, W., Steiner, P., Kozlowski, F., Sandmaier, H., “Visible Electroluminescence of Porous Silicon Devices with a Solid State Contact”, Mrs Meeting, Boston, Dec. 1991 Google Scholar
4. Kozlowski, F., Lang, W., “Spatially resolved Raman—measurements at electroluminescent porous n-silicon”, J. applied Phys, to be published.Google Scholar
5. Lehmann, V., Jobst, B., Muschik, T., Kux, A., Petrova-Koch, V., “Correlation between optical properties and crystallite size in porous silicon”, Applied Physics Letters, to be published.Google Scholar