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Luminescence of Mbe SimGen Strained Monolayer Superlattices

Published online by Cambridge University Press:  28 February 2011

M. A. Kallel ,
V. Arbet-Engels ,
R. P. G. Karunasiri  and
K. L. Wang
M. A. Kallel
Affiliation:
Device Research Laboratory, 7619 Boelter Hall, Electrical Engineering Department, University of California, Los Angeles, CA 90024
V. Arbet-Engels
Affiliation:
Device Research Laboratory, 7619 Boelter Hall, Electrical Engineering Department, University of California, Los Angeles, CA 90024
R. P. G. Karunasiri
Affiliation:
Device Research Laboratory, 7619 Boelter Hall, Electrical Engineering Department, University of California, Los Angeles, CA 90024
K. L. Wang
Affiliation:
Device Research Laboratory, 7619 Boelter Hall, Electrical Engineering Department, University of California, Los Angeles, CA 90024
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Abstract

SimGen strained monolayer superlattices (SMS) have been fabricated by molecular beam epitaxy (MBE) and characterized using photoluminescence (PL). Symmetrically strained structures with different periodicities have been grown on top of a Si1−xGex alloy buffer layer. Luminescence features below (above) the Si (Ge) energy bandgap have been observed and attributed to either dislocations in the buffer layer or to energy band transitions in the SMS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 479
Copyright
Copyright © Materials Research Society 1990

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References

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