Hostname: page-component-848d4c4894-pjpqr Total loading time: 0 Render date: 2024-06-16T16:44:42.828Z Has data issue: false hasContentIssue false
  • English
  • Français

Luminescence and Surface-State Characteristics in P-Type Porous Silicon

Published online by Cambridge University Press:  15 February 2011

A. Ramirez Porras ,
O. Resto ,
S. Z. Weisz ,
Y. Goldstein ,
A. Many  and
E. Savir
A. Ramirez Porras
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931
O. Resto
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931
S. Z. Weisz
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931
Y. Goldstein
Affiliation:
Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
A. Many
Affiliation:
Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
E. Savir
Affiliation:
Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
Get access

Abstract

Pulse measurements on the porous-Si/electrolyte system are employed to determine the surface effective area and the surface-state density at various stages of the anodization process used to produce the porous material. Such measurements were combined with studies of the photoluminescence spectra. These spectra were found to shift progressively to the blue as a function of anodization time. The luminescence intensity increases initially with anodization time, reaches a maximum and then decreases with further anodization. The surface state density, on the other hand, increases with anodization time from an initial value of ∼2×1012 cm−2 for the virgin surface to ∼1013 cm−2 for the anodized surface. This value is attained already after ∼2 min anodization and upon further anodization remains fairly constant. In parallel, the effective surface area increases by a factor of 10–30. This behavior is markedly different from the one observed previously for n-type porous Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 461
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2.Amato, I., Science 252, 922 (1991).Google Scholar
3.Cullis, A.G. and Canham, L.T., Nature 353, 335 (1991).Google Scholar
4. For the recent developments in this field see: Feng, Z.C. and Tsu, R., Porous Silicon (World Scientific, Singapore, 1994).Google Scholar
5.Koch, F. in Silicon Based Optoelectronic Materials, edited by Collins, R.T., Tischler, M.A., Abstreiter, G., and Thewalt, M.X. (Mater. Res. Soc. Proc. 298, Pittsburgh, PA, 1993) pp. 319–324.Google Scholar
6.Vasquez, R.P., Fathauer, R.W., George, T., Ksendzov, A. and Lin, T.L., Appl. Phys. Lett. 60, 1004 (1992).Google Scholar
7.Foresi, J.S. and Moustakas, T.D. in Light Emission from Silicon, edited by Iyer, S.S., Canham, L.T., and Collins, R.T. (Mater. Res. Soc. Proc. 256, Pittsburgh, PA, 1992) pp. 77–82.Google Scholar
8.Brandt, M.S., Fuchs, H.D., Stutzmann, M., Weber, J. and Cardona, M., Solid State Commun. 81, 307 (1992).Google Scholar
9.Wolovelsky, M., Levy, J., Goldstein, Y., Many, A., Weisz, S.Z. and Resto, O., Surf. Sci. 171, 442 (1986).Google Scholar
10.Weisz, S.Z., Avalos, J., Gomez, M., Many, A., Goldstein, Y., and Savir, E. in Defect- and Impurity-Engineered Semiconductors and Devices, edited by Ashok, S., Chevallier, J., Akasaki, I., Johnson, N.M., and Sopori, B.L. (Mater. Res. Soc. Proc. 378, Pittsburgh, PA, 1995) pp. 899–904.Google Scholar
11.Many, A., Goldstein, Y., and Grover, N.B., Semiconductor Surfaces (North-Holland, Amsterdam, 1971).Google Scholar
12.Weisz, S.Z., Penalbert, J., Many, A., Trokman, S., and Goldstein, Y., J. Phys. Chem. Solids 51, 1067 (1990).Google Scholar