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The LPCVD of Silicon Nitride Films from Alkylazidosilanes

Published online by Cambridge University Press:  25 February 2011

David A. Roberts ,
Arthur K. Hochberg ,
David L. O'Meara ,
Felicia Rusnak  and
Herman Hockenhull
David A. Roberts
Affiliation:
Schumacher, 1969 Palomar Oaks Way, Carlsbad, CA 92009
Arthur K. Hochberg
Affiliation:
Schumacher, 1969 Palomar Oaks Way, Carlsbad, CA 92009
David L. O'Meara
Affiliation:
Hughes Technology Center, Carlsbad, CA 92009
Felicia Rusnak
Affiliation:
Schumacher, 1969 Palomar Oaks Way, Carlsbad, CA 92009
Herman Hockenhull
Affiliation:
Schumacher, 1969 Palomar Oaks Way, Carlsbad, CA 92009
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Abstract

The series of azidosilanes, SiEtn(N3)4-n where n = 1,2,3 and Si(t-butyl)(N3)3 were evaluated for the LPCVD of silicon nitride thin films. Both SiEt(N3)3 and Si(t-butyl)(N3)3 gave deposition rates of approximately 100 Å/min at temperatures of 450–500°C but films appear to be porous and air sensitive. Film properties improved as deposition temperatures were increased to 600°C. The polyazides must be handled with extreme caution. An unexplained detonation of one sample of SiEt(N3)3 occurred during the course of this study.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 515
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Wolf, S. and Talbert, R. N., Silicon Processing for the VLSI Era, (Lattice Press, Sunset Beach, Ca. 1986), Chapter 6.Google Scholar
2. Brooks, T. A., Hess, D. W., Thin Film Solids, 153, 521 (1987).Google Scholar
3. Du, H., Gallois, B., Gonsalves, K. E., J. Am. Ceram. Soc., 73, 764, (1990).Google Scholar
4. Gordon, R. G., Hoffman, D. M., Riaz, U., Chem. Mater., 2, 480, (1990).Google Scholar
5. Nelson, U. S. Patent No 4,569,855.Google Scholar
6. Janca, J. et al. , Acta Phys. Slov., 33, 187 (1983).Google Scholar
7. Matsuda, H., Haruta, M., Eguchi, K., Nishimura, Y., Hirai, Y., Nakagiri, T., U. S. Patent No. 4,569,855 (February 11, 1986).Google Scholar
8. Gladfelter, W. L., Boyd, D. C., Hwang, J-W, Haasch, R. T., Evans, J. F., Ho, K-L, Jensen, K. F. in Chemical Perspectives of Microelectronic Materials, edited by Gross, M. E., Jasinski, J. M., Yates, J. T. Jr. (Mater. Res. Soc. Proc. 131, Pittsburgh, Pa. 1988) pp 447–452.Google Scholar
9. Wiberg, N., Neruda, B., in Intern, Organosilicon Chem. Sci. Commun. Prague, 232–5 (1965) (CAS 66 37996t)Google Scholar
10. Reichele, W. T., Inorg. Chemistry, 3, 402, (1964).Google Scholar
11. Pan, P., J. Electrochem. Soc., 132, 3001 (1985).Google Scholar
12. Handbook of Chemistry and Physics, Weast ed. 1980.Google Scholar
13. Hochberg, A. K., O'Meara, D. L. preceding paper.Google Scholar
14. Ando, W., Tsumaki, H., Ikeno, M., J.C.S. Chem. Comm., 597 (1981).Google Scholar