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LPCVD Of Silicon Carbide Films From The Organosilanes Diethylsilane And Di-T-Butylsilane

Published online by Cambridge University Press:  15 February 2011

Roland A. Levy  and
James M. Grow
Roland A. Levy
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
James M. Grow
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
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Abstract

In this paper, the kinetics and properties of amorphous LPCVD silicon carbide films synthesized from the single organosilane precursors diethylsilane (DES) or di-tbutylsilane (DTBS) are discussed. For DES, the growth rate is observed to vary linearly with flow rate and pressure, while for DTBS, a square root dependency is seen as a function of these parameters. An Arrhenius type behavior was observed for both chemistries yielding activation energy values of 40 and 25 kcal/mol for DES and DTBS respectively. The elemental composition of the films became progressively richer in carbon as the deposition temperature increased with stoichiometry occurring near 750°C. The film stress was dependent on carbon content and became compressive at compositions near Si0.35C0.65. The hardness and Young's modulus of the films increased with increasing carbon content reaching maxima near stoichiometry. Free-standing membranes produced under optimal processing conditions had a relatively low optical transmission due to excess carbon. Although, transmission characteristics were improved by adding NH3 in the reaction chamber, the resulting silicon carbonitride films exhibited undesirably high values of tensile stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 306: Symposium K – Materials Aspects of X-Ray Lithography , 1993 , 219
Copyright
Copyright © Materials Research Society 1993

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