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Low-voltage graphene transistors based on self-assembled monolayer nanodielectrics

Published online by Cambridge University Press:  28 May 2012

Cecilia Mattevi ,
Florian Colléaux ,
Hokwon Kim ,
Manish Chhowalla  and
Thomas D. Anthopoulos
Cecilia Mattevi
Affiliation:
Materials Department, Imperial College London, London SW7 2AZ, U.K.
Florian Colléaux
Affiliation:
Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2BW, U.K.
Hokwon Kim
Affiliation:
Materials Department, Imperial College London, London SW7 2AZ, U.K.
Manish Chhowalla
Affiliation:
Materials Department, Imperial College London, London SW7 2AZ, U.K. (current address) Materials Science and Engineering Rutgers University, Piscataway, New Jersey 08854, U.S.A.
Thomas D. Anthopoulos
Affiliation:
Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2BW, U.K.
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Abstract

We demonstrate low operating voltage (<|1.5| V) chemical vapour deposited (CVD) graphene transistors using solution processable organic self-assembled monolayers (SAMs) as nanodielectrics. The transistors show weak extrinsic doping, hysteresis-free operation, low gate-leakage current and good operating stability with bias-stress free characteristics. Most importantly we demonstrate that the Dirac potential can be finely tuned by modifying the molecular end-group of the SAMs without compromising the electrical characteristics of the transistors.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1451: Symposium DD/EE – Nanocarbon Materials and Devices , 2012 , pp. 179 - 184
Copyright
Copyright © Materials Research Society 2012

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References

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