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Low-Temperature Preparation of Poly-Si Thin-Films Having Giant Grains

Published online by Cambridge University Press:  15 February 2011

Wen-Chang Yeh  and
Masakiyo Matsumura
Wen-Chang Yeh
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 0-okayama, Meguro-ku, Tokyo 152-8550, Japan, wyeh@silicon.pe.titech.ac.jp, URL: http://silicon.pe.titech.ac.jp
Masakiyo Matsumura
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 0-okayama, Meguro-ku, Tokyo 152-8550, Japan
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Abstract

A low heat-capacitance substrate has been introduced to lateral grain-growth for Si thin-films. Grains as large as 13μm could be fabricated by irradiation of a single shot of an excimer-laser light pulse with intensity gradient. The film has an orientation in the (110) direction, different from (111) for the conventional excimer-laser-annealed film, and is applicable to a seed layer for solid-phase epitaxial-growth aiming at solar cell application.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 177
Copyright
Copyright © Materials Research Society 1999

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