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Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

Published online by Cambridge University Press:  10 February 2011

A. Izumi ,
T. Ichise  and
H. Matsumura
A. Izumi
Affiliation:
JAIST(Japan Advanced Institute of Science and Technology)Ishikawa 923-1292, JAPAN, a-izumi@jaist.ac.jp
T. Ichise
Affiliation:
JAIST(Japan Advanced Institute of Science and Technology)Ishikawa 923-1292, JAPAN, a-izumi@jaist.ac.jp
H. Matsumura
Affiliation:
JAIST(Japan Advanced Institute of Science and Technology)Ishikawa 923-1292, JAPAN, a-izumi@jaist.ac.jp
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Abstract

Silicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 508: Symposium B – Flat Panel Display Materials - 1998 , January 1998 , 151
Copyright
Copyright © Materials Research Society 1998

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