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Low-Temperature Deposition of ZrC thin films from a Single-Source Precursor

Published online by Cambridge University Press:  22 February 2011

David C. Smith ,
Rodrigo R. Rubiano ,
Matthew D. Healy  and
Robert W. Springer
David C. Smith
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
Rodrigo R. Rubiano
Affiliation:
Department of Nuclear Engineering, MIT, Cambridge, MA 02139
Matthew D. Healy
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
Robert W. Springer
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
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Abstract

Stable zirconium carbide thin films have been deposited from a singlesource organometallic precursor, tetraneopentyl zirconium, at substrate temperatures above 500 °C. Materials deposited above this temperature are crystalline by X-ray diffraction. A metal to carbon ratioof 1:2 is observed by Auger electron spectroscopy depth profiling. X-ray photoelectron spectroscopy indicates the zirconium is single phase. The observed spectra correspond well to spectra for zirconium carbide standards. Carbon XPS reveals carbidic and graphitic or hydrocarbon species with a third unknown carbon species. Elastic recoil detection finds a large, up to 16%, hydrogen content in the thin film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 643
Copyright
Copyright © Materials Research Society 1993

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References

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