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Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride from Tetra-Silane and Hydrogen Azide

Published online by Cambridge University Press:  22 February 2011

Ryoichi Ishihara ,
Hiroshi Kanoh ,
Yasutaka Uchida ,
Osamu Sugiura  and
Masakiyo Matsumura
Ryoichi Ishihara
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2–12–1 O-okayama, Meguro-ku, Tokyo 152, Japan.
Hiroshi Kanoh
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2–12–1 O-okayama, Meguro-ku, Tokyo 152, Japan.
Yasutaka Uchida
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2–12–1 O-okayama, Meguro-ku, Tokyo 152, Japan.
Osamu Sugiura
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2–12–1 O-okayama, Meguro-ku, Tokyo 152, Japan.
Masakiyo Matsumura
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2–12–1 O-okayama, Meguro-ku, Tokyo 152, Japan.
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Abstract

Silicon nitride films have been successfully deposited at a temperature as low as 300°C by chemical-vapor-deposition using tctra-silane (Si4 H10) and hydrogen azidc (HN3). Atomic ratio (N/Si) of the film deposited at 400°C was 1.47, i.e., the film was N-rich. Total hydrogen content was about 25atomic%. The breakdown-field strength was 6.5MV/cm at leakage-current density of 1μA/cm2, and the low-field resistivity was more than 1015 Ωcm. Similar electrical characteristics were obtained from films deposited at a temperature range between 300°C and 500°C. Amorphous silicon thin-film transistors equipped with this film as the gate dielectric showed good transfer characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 3
Copyright
Copyright © Materials Research Society 1993

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References

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