Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-24T18:24:00.693Z Has data issue: false hasContentIssue false
  • English
  • Français

Low-Frequency Noise Characterization in AlGaN/GaN HEMTs with Varying Gate Recess Depths

Published online by Cambridge University Press:  01 February 2011

Shrawan. K. Jha ,
Bun. H. Leung ,
Charles C. Surya ,
Heins Schweizer  and
Manfred. H. Pilkhuhn
Shrawan. K. Jha*
Affiliation:
Department of Electronic Engineering, The Hong Kong Polytechnic University, Hong Kong.
Bun. H. Leung
Affiliation:
Department of Electronic Engineering, The Hong Kong Polytechnic University, Hong Kong.
Charles C. Surya
Affiliation:
Department of Electronic Engineering, The Hong Kong Polytechnic University, Hong Kong.
Heins Schweizer
Affiliation:
Department of Physics, University of Stuttgart, Germany.
Manfred. H. Pilkhuhn
Affiliation:
Department of Physics, University of Stuttgart, Germany.
*
a email: 03900972r@polyu.edu.hk
Get access

Abstract

Low-frequency noise measurements were performed on a number of AlGaN/GaN HEMTs with different gate recess depths, which were formed by dry etching. Detailed characterizations of the low-frequency noise properties were performed on the devices as a function of as a function of hot-electron stressing conducted at VD = 10 V and VG = -1.5 V. The room temperature voltage noise power spectral density, SV(ƒ), of the devices were found to show 1/ƒ dependence. A comparison of SV(ƒ) measured from different devices clearly indicate increase in the noise levels for the devices with large recess depths, reflecting the degradation caused by ion-impact induced damage during recess formation. Furthermore, the results of low-frequency noise measurements showed fast degradations for the devices with larger gate recess depths. Our experimental data clearly show that the dry etching process has induced damages in gates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E8.31
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

b

National Chiao Tung University, Taiwan, R.O.C.

References

Reference:

[1] Pankove, J. I., MRS Symp. Proc. 162, 515 (1990).Google Scholar
[2] Das, P. and Ferry, D. K., Solid-State Electron. 19, 76 (1976).Google Scholar
[3] Green, B. M., Chu, K. K., Chumbers, E. M., Smart, J. A., Shealy, J. R., and Eastman, L. F., IEEE Electron. Device Lett., 21, 268, (2000).Google Scholar
[4] Sheppard, ST, Doverspike, K, Pribble, WC, Allen, ST, Palmour, JW, Kehias, LT. IEEE Electron Devices Lett. 20, 161, (1999).Google Scholar
[5] Cabalu, J.S., Gunter, L.L., Friel, I., Bhattacharyya, A., Fedyunin, Y., Chu, K, Bellotti, E., Eddy, C., Moustakas, T., Proceeding of GaN and Related Alloys - 2003 Symposium, 85, 2004.Google Scholar
[6] Khan, M. A., Bhattarai, A., Kuznia, J. N., and Olson, D. T., Appl. Phys. Lett., 63, 1214, (1993).Google Scholar
[7] Liu, Y., Bardwellı, J. A., McAlister, S. P., Tang, H., Webb, J. B., and MacElwee, T. W., Phys. stat. sol. (a) 188, 233–237, (2001).Google Scholar
[8] Miller, EJ, Dang, XZ, Yu, ET. J Appl Phys, 88, 5951, (2000).Google Scholar
[9] Ansell, BJ, Harrison, I, Foxon, CT., Phys Stat Sol A; 188, 279, (2001).Google Scholar
[10] Ho, W.Y., Fong, W.K., Surya, C., Tong, K.Y., Kim, W., Botcharev, A. and Morkoc, H., MRS Internet J. Nitride Semicond. Res. 4S1, G6.5, (1999).Google Scholar
[11] Pala, N, Rumyantsev, S.L., Shur, M.S., Levinshtein, M.E., Khan, M.A., Simin, G.S., Gaska, R., Proceedings of the SPIE, Noise in Devices and Circuits, 5113, 217, (2003).Google Scholar
[12] To be published.Google Scholar