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Low-Field Electron Emission Properties from Intrinsic and S-Incorporated Nanocrystalline Carbon Thin Films Grown by Hot- Filament CVD

Published online by Cambridge University Press:  17 March 2011

S. Gupta ,
B. R. Weiner ,
B. L. Weiss ,
G. Morell ,
Kenyetta Johnson  and
Oscar O. Oritz
S. Gupta
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, P O Box 23343, PR00931, USA
B. R. Weiner
Affiliation:
Department of Chemistry, University of Puerto Rico, San Juan, P O Box 23346, PR00931, USA
B. L. Weiss
Affiliation:
Department of Chemistry, University of Puerto Rico, San Juan, P O Box 23346, PR00931, USA
G. Morell
Affiliation:
Department of Physical Sciences, University of Puerto Rico, San Juan, P O Box 23323, PR00931, USA
Kenyetta Johnson
Affiliation:
NSF-REU (CHE/9732391) summer 2000 participants
Oscar O. Oritz
Affiliation:
NSF-REU (CHE/9732391) summer 2000 participants
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Abstract

Results are reported on the electron field emission properties of intrinsic and S- incorporated nanocrystalline carbon (n-C:S) thin films grown on molybdenum substrates by hotfilament CVD technique from methane-hydrogen (CH4/H2) and hydrogen sulphide-hydrogen (H2S/H2) gas pre mixtures respectively. The field emission properties for the S-incorporated films were investigated as a function of substrate temperature (TS). Lowest turn-on field was observed at 4.5 V/μm for one of the sample, which was grown at 900 °C, demonstrating the effect of sulfur addition. The S-incorporation also causes microstructural and structural changes, as characterized with ex situ techniques such as SEM, AFM and Raman spectroscopy (RS). Sassisted films show smoother surfaces and finer-grained than those grown without it. The electron field emission properties of S-assisted films is also compared to the film grown without it (intrinsic) at a particular deposition temperature and the turn-on field was found to be almost half for the S-assisted film than for the non S-assisted film. The influence of growth temperature was also conducted and an inverse correlation was found with the turn-on field (Ec). These studies were performed in order attempt to “tailor-the-material” as a viable cold cathode material by introducing the defecTS and altering the electronic structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F16.2.1
Copyright
Copyright © Materials Research Society 2001

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