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Low-Energy Implantation of Si and Sn into GaAs

Published online by Cambridge University Press:  25 February 2011

W.S. Rubart ,
K.S. Jones ,
L. Seiberling  and
D.K. Sadana
W.S. Rubart
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, Florida 32608
K.S. Jones
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, Florida 32608
L. Seiberling
Affiliation:
Dept. of Physics, University of Florida, Gainesville, Florida 32608
D.K. Sadana
Affiliation:
IBM, T.J Watson Research Center, Yorktown Heights, New York 10598
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Abstract

(100) GaAs was implanted with 29Si+ at energies of 10keV or 20keV and 119Sn+ at an energy of 60keV. The doses used for the Si+ implants were from 1 × 1013 crrr2 to 1 × 1016 cm-2, whereas the Sn+ doses ranged from 1.5×1012 cm-2 to 1.5×1015 cm-2. Implanted samples were rapidly thermal annealed (RTA) in either an argon or arsine ambient at 950°C or 900°C for 12 seconds. Transmission electron microscopy (TEM) results indicate that the annealing ambient has a dramatic effect on the defect annealing kinetics for 10keV implants but not the 20keV Si+ implants. For the 10keV implants reducing arsenic loss via use of an arsine ambient or a Si3N4 cap results in a dramatic decrease in the dislocation loop density. The defect morphology is not related to the as implanted morphology (amorphous or crystalline) but is related to the species. Hall effect measurements revealed an increase in the mobility by a factor of 1.5 times for high dose Si+ and Sn+ implanted samples when RTA was carried out in an arsine instead of an argon ambient. This is despite little or no change in the extended defect morphology or carrier concentration, indicating that the point defect concentration influences the mobility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 677
Copyright
Copyright © Materials Research Society 1990

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References

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