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A Low-Cost BiCMOS Process with Metal Gates

Published online by Cambridge University Press:  14 March 2011

H.W. van Zeijl  and
L.K. Nanver
H.W. van Zeijl
Affiliation:
Laboratory of ECTM, DIMES, Delft University of Technology, P.O.Box 5053, 2600 GB, Delft, The Netherlands, Phone: +31 15 2784949, Fax: +31 15 2622163, E-mail: henkz@dimes.tudelft.nl
L.K. Nanver
Affiliation:
Laboratory of ECTM, DIMES, Delft University of Technology, P.O.Box 5053, 2600 GB, Delft, The Netherlands, Phone: +31 15 2784949, Fax: +31 15 2622163, E-mail: henkz@dimes.tudelft.nl
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Abstract

A low-complexity and low-cost double-metal BiCMOS process is proposed with only 13 mask steps. By decoupling the source-drain thermal budget from gate-stack formation, metal gates are realizable.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 611: Symposium C – Gate Stack & Silicide Issues in Silicon Processing , 2000 , C7.2.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1 Meijer, G. C. M., Concepts and focus point for intelligent sensor systems, Sensor and Actuators A, 41–42 1994 p. 183–191 Google Scholar
2 Zeijl, H. W. van and Nanver, L.K., Characterization of low-stress LPCVD silicon nitride in high frequency BJT's with self-aligned metallization. ISICT Beijing 1998, p 98–101 Google Scholar