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A Low-Cost BiCMOS Process with Metal Gates
Published online by Cambridge University Press: 14 March 2011
Abstract
A low-complexity and low-cost double-metal BiCMOS process is proposed with only 13 mask steps. By decoupling the source-drain thermal budget from gate-stack formation, metal gates are realizable.
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- Research Article
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- Copyright © Materials Research Society 2000
References
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