Hostname: page-component-848d4c4894-jbqgn Total loading time: 0 Render date: 2024-07-02T13:44:25.817Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Voltage Operation of PZT Ferroelectric Film deposited by Liquid Source MOCVD

Published online by Cambridge University Press:  01 February 2011

Yutaka Nishioka ,
Takeshi Masuda ,
Masahiko Kajinuma ,
Takakazu Yamada ,
Masaki Uematsu  and
Koukou Suu
Yutaka Nishioka
Affiliation:
Institute for Semiconductor Technologies, ULVAC, Inc. 1220–1 Suyama, Susono, Shizuoka, 410–1231, Japanyutaka_nishioka@ulvac.com
Takeshi Masuda
Affiliation:
Institute for Semiconductor Technologies, ULVAC, Inc. 1220–1 Suyama, Susono, Shizuoka, 410–1231, Japanyutaka_nishioka@ulvac.com
Masahiko Kajinuma
Affiliation:
Institute for Semiconductor Technologies, ULVAC, Inc. 1220–1 Suyama, Susono, Shizuoka, 410–1231, Japanyutaka_nishioka@ulvac.com
Takakazu Yamada
Affiliation:
Institute for Semiconductor Technologies, ULVAC, Inc. 1220–1 Suyama, Susono, Shizuoka, 410–1231, Japanyutaka_nishioka@ulvac.com
Masaki Uematsu
Affiliation:
Institute for Semiconductor Technologies, ULVAC, Inc. 1220–1 Suyama, Susono, Shizuoka, 410–1231, Japanyutaka_nishioka@ulvac.com
Koukou Suu
Affiliation:
Institute for Semiconductor Technologies, ULVAC, Inc. 1220–1 Suyama, Susono, Shizuoka, 410–1231, Japanyutaka_nishioka@ulvac.com
Get access

Abstract

Thin Pb(Zr, Ti)O3 films were grown on a 8-inch Ir(111)/SiO2/Si substrate by a liquid-source MOCVD system. These films showed dependency of ferroelectric properties on several deposition parameters. PZT single phase was obtained at a substrate temperature of 620°C. The film showed (111) preferred orientation and the Pt/Pb1.16(Zr0.45, Ti0.55)Ox(115nm)/Ir capacitors had excellent ferroelectric properties. The switching charge (Qsw) value (at 2V), saturation voltage (V90) and leakage current density (at 1.5V) were 47.4uC/cm2, 1.7V and 7.5E-8A/cm2 respectively. The capacitor made by using an IrOx top electrode had excellent fatigue-free property.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C7.6
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Yi, G., Wu, Z. and sayer, M.: j. Appl. Pyys. 64 (1998) 2717.Google Scholar
[2] Abe, K. and Komatsu, S.: Jpn. J. Appl. Phys. 31 (1992) 2985.Google Scholar
[3] Ramesh, R., Gilchrist, H., Sands, T., Keramidas, V. G., Haaknenaasen, R. and Fork, D. K.: Appl Pyhs. Lett. 63 (1993) 3592.Google Scholar
[4] Suu, Koukoku, Osawa, Akira, Tani, Noriaki, Ishikawa, Michio, Nakamura, Kyozo, Ozawa, Takanori, Sameshima, Katsumi, Kamisawa, Akira and Takasu, Hideshi: Jpn. J. Appl. Phys. Vol. 35 (1996) pp. 4967–4971 Google Scholar
[5] Joo, H. J., Song, Y. J., Kim, H. H., Jang, N. W., Lee, S. Y., Park, Y.S., and Kim, Kinam: Integrated Ferroelectrics, 2002, Vol. 48, pp. 119–126 Google Scholar
[6] Moise, T. S., Rickes, J., Bailey, R., etal.: IEDM 2002–535Google Scholar
[7] Horii, Yoshimasa, Hikosaka, Yukinobu, Itoh, Akio, Matsuura, Katsuyoshi, Kurasawa, Masaki, Komuro, Gen-ichi, Matsuyama, kenji, Eshita, Takashi, and Kashiwagi, Shigeo: IEDM 2002–539Google Scholar