Hostname: page-component-848d4c4894-89wxm Total loading time: 0 Render date: 2024-07-06T00:33:42.602Z Has data issue: false hasContentIssue false

Low Threshold ZnSe1−x Tex Optical Limiters

Published online by Cambridge University Press:  15 February 2011

W. Ji
Affiliation:
Physics Department, National University of Singapore, Lower Kent Ridge Road, Singapore 0511, Republic of Singapore
H. S. Tan
Affiliation:
Physics Department, National University of Singapore, Lower Kent Ridge Road, Singapore 0511, Republic of Singapore
Z. C. Feng
Affiliation:
Physics Department, National University of Singapore, Lower Kent Ridge Road, Singapore 0511, Republic of Singapore
P. Becla
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA02139, USA
Get access

Abstract

We report an experimental investigation of optical limiting with bulk ZnSe1−xTex crystals at wavelengths just below the band edge, using nanosecond laser pulses. The limiting threshold as low as a few mJ/cm2 has been demonstrated. The generation of free charge carriers by singlephoton absorption, and subsequent free-carrier nonlinearities (nonlinear absorption and selfdefocusing) are responsible for the limiting behavior.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Stryland, E. W. Van, Wu, Y. Y., Hagan, D. J., Soileau, M. J. and Mansour, K., J. Opt. Soc. Am. B 5, 1980 (1988).Google Scholar
2. Ji, W., Milward, R., Kar, A. K., Wherrett, B. S. and Pidgeon, C. R., J. Opt. Soc. Am. B 7, 868 (1990).Google Scholar
3. Milward, J. R., Ji, W., Kar, A. K., Pidgeon, C. R. and Wherrett, B. S., J. Appl. Phys. 69, 2708 (1994).Google Scholar
4. Milward, J. R., Ji, W., Kar, A. K., Pidgeon, C. R. and Wherrett, B. S., J. Appl. Phys. 69, 7351 (1991).Google Scholar
5. Canto-Said, E. J., Hagan, D. J., Young, J. and Stryland, E. W. Van, IEEE J. Quant. Electron. 27, 2274 (1991).Google Scholar
6. Said, A. A., Sheik-Bahae, M., Hagan, D. J., Wei, T. H., Wang, J., Young, J., and Stryland, E. W. Van, J. Opt. Soc. Am. B 5, 405 (1992).Google Scholar
7. Bolger, J. A., Galbraith, I., Kar, A. K., Simpson, J., Wang, S. Y., Prior, K. A., Cavenett, B. C., and Wherrett, B. S., Appl. Phys. Lett. 63, 709 (1993).Google Scholar
8. Ji, W., Kukaswadia, A. K., Feng, Z. C., and Tang, S. H., J. Appl. Phys. 75, 3340 (1994).Google Scholar
9. Lee, K.-H., Cho, W.-R., Park, J.-H., Kim, J.-S., Park, S.-H., Kim, U., Opt. Lett. 19, 1116 (1994).Google Scholar
10. Hagan, D. J., Stryland, E. W. Van, Soileau, M. J. and Wu, Y. Y., Opt. Lett. 13, 315 (1988).Google Scholar
11. Ji, W., Kukaswadia, A. K., Feng, Z. C., Tang, S. H., and Becla, P., J. Cryst. Growth 138, 187 (1994).Google Scholar
12. Brasil, M. J. S. P., Nahory, R. E., Turco-Sandroff, F. S., Gilchrist, H. L., Martin, Nad R. J., Appl. Phys. Lett. 58, 2509 (1991).Google Scholar
13. Wherrett, B. S., Walker, A. C. and Tooley, F. A. P., in Optical Nonlinearities and Instabilities in Semiconductors, edited by Haug, H. (Academic, New York, 1988), p. 239.Google Scholar