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Low Threading Dislocation Densities in Thick, Relaxed Si1−xGex Buffer Layers

Published online by Cambridge University Press:  22 February 2011

C. G. Tuppen ,
C. J. Gibbings  and
M. Hockly
C. G. Tuppen
Affiliation:
BT Laboratories, Martlesham Heath, Ipswich, IP5 7RE, U.K.
C. J. Gibbings
Affiliation:
BT Laboratories, Martlesham Heath, Ipswich, IP5 7RE, U.K.
M. Hockly
Affiliation:
BT Laboratories, Martlesham Heath, Ipswich, IP5 7RE, U.K.
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Abstract

A series of relaxed Si1−xGex alloy layers with germanium contents up to 70% has been deposited on silicon. Although direct deposition ot these highly mismatched layers on silicon gave dislocation densities of 109-1010cm2 and poor morphology, it was found that the use of a linear grade enabled completely relaxed Si.3Ge.7 layers with defect densities of ∼3.105cm−2 to be obtained. However, if the grading was too rapid the dislocation density was much higher. The role of dislocation nucleation and propagation in determining the required thickness of graded layer is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 187
Copyright
Copyright © Materials Research Society 1991

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References

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