Hostname: page-component-77c89778f8-m8s7h Total loading time: 0 Render date: 2024-07-20T17:40:58.732Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature Tungsten, Tungsten Carbide and Tantalum Carbide Film Growth

Published online by Cambridge University Press:  17 March 2011

Y.-M. Sun ,
S.Y. Lee ,
E. R. Engbrecht ,
K. Pfeifer ,
S. Smith ,
J. M. White  and
J. G. Ekerdt
Y.-M. Sun
Affiliation:
Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712
S.Y. Lee
Affiliation:
Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712
E. R. Engbrecht
Affiliation:
Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712
K. Pfeifer
Affiliation:
International Sematech Austin, TX 78741
S. Smith
Affiliation:
International Sematech Austin, TX 78741
J. M. White
Affiliation:
Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712
J. G. Ekerdt
Affiliation:
Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712
Get access

Abstract

Abstract:Low temperature chemical vapor deposition of tungsten, tungsten carbide and tantalum carbide films on SiO2/Si(100) surfaces was studied by X-ray photoelectron spectroscopy (XPS) and electron microscopy. Tungsten carbide films were deposited using the W(CO)6 precursor with and without ethylene over temperatures ranging from 250 to 500 °C. The films grown without ethylene contained approximately 13 % carbon and 6 % oxygen. Cross section scanning electron microscopy imaging of the films grown at various temperatures without ethylene shows a polycrystalline microstructure, and the grain size increases dramatically as the growth temperature increases. Introducing ethylene increased carbon incorporation and changed the microstructure to amorphous-like. The tungsten to carbon ratio was approximately 2 at growth below 500 °C, and reached ~ 1.2 above 500 °C. The tantalum carbide films were deposited in a plasma enhanced chemical vapor deposition (PECVD) process using methane. The PECVD tantalum carbide films were conductive with a resistivity of ~1000 µΩ cm, which is about one order of magnitude lower than thermally grown films from pentakisdimethylamino tantalum.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P6.43
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kelsey, J. E., Goldberg, C., Nuesca, G., Peterson, G., Kaloyeros, A. and Arkles, B., J. Vac. Sci. Technol. B 17, 1101 (1999).Google Scholar
2. Oku, T., Kawakami, E., Uekuho, M., Takahim, K., Yamaguchi, S. and Murakumi, M., Appl. Surf. Sci. 99, 265 (1996).Google Scholar
3. Ono, H., Nakano, T. and Ohta, T., Appl. Phys. Lett. 64, 1511 (1994).Google Scholar
4. Clevenger, L. A., Bojarczuk, N. A., Holloway, K., Harper, J.M.E., Cabaral, C. Jr, Schad, R.G., Cardone, F. and Stolt, L., J. Appl. Phys. 73, 300 (1993).Google Scholar
5. Wang, M.T., Lin, Y.C., and Chen, M. C., J. Electrochem. Soc. 145, 2538 (1998).Google Scholar
6. Muranka, S. P., Gutmann, R. J., Kaloyeros, A. E. and Lanford, W. A., Thin Solid Films 236, 257 (1993).Google Scholar
7.“Carbide, Nitride and Boride Materials Synthesis and Processing”, ed. Weimer, A.W., (Chapman & Ahll, New York, 1997) pp. 639–664.Google Scholar
8. Imahori, J., Oku, T. and Murakami, M., Thin Solid Films 301, 142 (1997).Google Scholar
9. Sun, Y.-M., Lee, S.Y., Lemonds, A.M., Engbrecht, E.R., Veldman, S., Lozano, J., White, J. M., Ekerdt, J. G., Emesh, I., and Pfeifer, K., (submitted).Google Scholar
10.“Handbook of X-ray Photoelectron Spectroscopy”, edited by Chastin, J. and King, R. C. Jr, Published by Physical Electronics, U.S.A, 1995.Google Scholar
11. Rigby, L. J., Can. J. Phys. 42, 1256 (1964).Google Scholar
12. Chesters, M.A., Hopkins, B.J., Taylor, P.A. and Winton, R.I.. Surf. Sci. 83, 181 (1979).Google Scholar
13. Fix, R., Gordon, R. G., Hoffman, D. M., Chem. Mater. 5, 614 (1993).Google Scholar