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Low Temperature Silicon Oxidation with Electron Cyclotron Resonance Oxygen Plasma

Published online by Cambridge University Press:  25 February 2011

K. T. Sung  and
S. W. Pang
K. T. Sung
Affiliation:
Solid State Electronics Laboratory Department of Electrical Engineering and Computer ScienceThe University of Michigan, Ann Arbor, MI 48109-2122
S. W. Pang
Affiliation:
Solid State Electronics Laboratory Department of Electrical Engineering and Computer ScienceThe University of Michigan, Ann Arbor, MI 48109-2122
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Abstract

Silicon was oxidized at low temperature with an oxygen plasma generated by an electron cyclotron resonance (ECR) source. The ECR source utilized a multicusp magnetic field formed by permanent magnets. Microwave power at 2.45 GHz was applied to the source and rf power at 13.56 MHz was applied to the sample stage. Si oxidation was studied as a function of source distance, pressure, microwave power, and rf power. The oxide thickness increases with microwave and rf power but decreases with source distance. The oxidation rate increases with pressure up to 12 mTorr, then decreases at higher pressure. The relative emission intensities in the plasma monitored using optical emission spectroscopy showed similar dependence on the source distance and microwave power. Oxidation temperature was estimated to be <100°C. Using ellipsometry and X-ray photoelectron spectroscopy, the oxidized films were found to be close to that of thermal oxide with refractive index at 1.45 and oxygen to silicon ratio of 2. From the current-voltage and capacitance-voltage measurements, the breakdown fields of these oxide films were 6.3 MV/cm and the fixed charge densities were 7×1010 cm−2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 319
Copyright
Copyright © Materials Research Society 1992

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