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Low Temperature Si Dot Thin-Film-Transistor Memory

Published online by Cambridge University Press:  10 February 2011

K. Nomoto ,
D. P. Gosain ,
T. Noguchi ,
S. Usui  and
Y. Mori
K. Nomoto
Affiliation:
Research Center, Sony Corporation, 2-1-1 Shinsakuragaoka, Hodogaya-ku, Yokohama 240-0036, JAPAN TEL: +81-45-353-6865, FAX: +81-45-353-6909, E-mail: knomoto@src.sony.co.jp
D. P. Gosain
Affiliation:
Research Center, Sony Corporation, 2-1-1 Shinsakuragaoka, Hodogaya-ku, Yokohama 240-0036, JAPAN
T. Noguchi
Affiliation:
Research Center, Sony Corporation, 2-1-1 Shinsakuragaoka, Hodogaya-ku, Yokohama 240-0036, JAPAN
S. Usui
Affiliation:
Research Center, Sony Corporation, 2-1-1 Shinsakuragaoka, Hodogaya-ku, Yokohama 240-0036, JAPAN
Y. Mori
Affiliation:
Research Center, Sony Corporation, 2-1-1 Shinsakuragaoka, Hodogaya-ku, Yokohama 240-0036, JAPAN
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Abstract

We report a novel poly-Si-thin-film-transistor based memory with Si-nano-crystals (Si dots) floating gate fabricated on a quartz substrate at a temperature below 400°C. Novel techniques of Si-dot and tunnel-oxide formation using excimer laser annealing were performed. A preliminary device shows a threshold voltage shift larger than 1 V with 20 V, 10 ms write/erase (W/E) operation and a retention time of 103 s at room temperature. The device operates 104 W/E cycles without significant degradation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 571: Symposium W – Semiconductor Quantum Dots , 1999 , 25
Copyright
Copyright © Materials Research Society 2000

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References

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